SIRA24DP-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.1V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2650pF @ 10V
Vgs (Max):	+20V, -16V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 4.5V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to SIRA24DP-T1-GE3

The SIRA24DP-T1-GE3 transistor is a single-package FET (field effect transistor) designed for digital devices. It works by allowing or blocking the flow of electrons between two source-drain terminals. When used as a switch, the SIRA24DP-T1-GE3 allows or restricts current depending on the voltage applied to a gate terminal.

Application Field of SIRA24DP-T1-GE3

The SIRA24DP-T1-GE3 FET is suitable for use in a variety of digital devices. It is used as a switch for making multiple digital channels, enabling users to switch elements in circuits such as sensors and microcontrollers. Additionally, the FET is used in a variety of power-related applications, including DC-DC converters and voltage regulators.The SIRA24DP-T1-GE3 transistor is also used in low-noise audio amplifiers, as it helps reduce inaudible audible noise generated by audio amplifiers. Additionally, it is used in low-cost graphics cards to reduce the power consumption while increasing the video performance.

Working Principle of SIRA24DP-T1-GE3

The SIRA24DP-T1-GE3 is a vertical channel MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor). It works by modulating the flow of electrons between two source-drain terminals by the presence or absence of an electrostatic field applied to a gate terminal.The SIRA24DP-T1-GE3 is designed to support a wide range of voltage and current levels. This makes it suitable for a wide range of applications that require large amounts of current and high levels of precision. When the gate voltage is increased, the electrostatic field increases and more electrons are able to pass through the channel. Conversely, when the gate voltage is decreased, the electrostatic field is reduced and fewer electrons are able to pass through the channel. This allows the FET to act as an electronic switch, allowing and blocking current depending on the voltage applied to the gate.

Conclusion

The SIRA24DP-T1-GE3 is a single-package FET designed for a wide range of digital devices. It is used as a switch, helping users control multiple digital channels. Additionally, it is used in power-related applications, low-noise audio amplifiers, and low-cost graphics cards. The FET works by modulating the flow of electrons between two source-drain terminals, allowing and blocking current depending on the voltage applied to a gate terminal.

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