SIRA62DP-T1-RE3

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The SIRA62DP-T1-RE3 is a single-mode N-Channel enhancement-mode field-effect transistor (FET). It is a small-signal transistor with very low on-state resistance (RDSon) and fast switching speeds. This type of transistor is typically used in power management and low-voltage analog and mixed-signal circuits. It is also suitable for industrial, medical, and automotive applications.

The SIRA62DP-T1-RE3 has a gate-source voltage of -2 V to -6 V, a drain-source voltage of -20 V to -20 V, and an operating temperature range of – 55° to 125°C. It is a reliable, stable, and rugged device with high performance and wide use in various applications.

In terms of applications, the SIRA62DP-T1-RE3 is a versatile device used for various purposes such as low-noise preamplifier and power switch, low-voltage analog circuits, low-voltage medium-power amplifiers, and audio sub-systems. The transistor is typically used in motor controllers, power inverters, and motor drive control integrated circuit (IC) applications. It is also used in automotive engine control systems and electronic switch mode power supplies (SMPS).

The working principle of the SIRA62DP-T1-RE3 is an N-channel enhancement-mode FET, which is based on the principle of electrical charge in a semiconductor material. The gate terminal, which is controlled by a small negative voltage, controls the electrical current between the source and drain terminals. When the control voltage is applied to the gate, charge flows through the transistor and the corresponding voltage level at the drain terminal is the output voltage. This type of transistor features small on-state resistance, low turn-on threshold, and fast switching capability, making it ideal for power supply and power control applications.

When this type of transistor is used, it is important to note that the high gate-source voltage can cause permanent damage to the transistor, so it is important to keep this voltage within the rated limits. Additionally, the gate-source voltage must be kept at least 4 volts lower than the drain-source voltage to prevent gate-source junction breakdown, which could damage the transistor. The on-state resistance is, therefore, the key parameter to be studied and the drain-source voltage must be applied before the gate-source voltage is applied.

The SIRA62DP-T1-RE3 is a single-mode N-channel enhancement-mode field-effect transistor (FET). It is a reliable and versatile device suitable for a wide range of applications, such as low-noise preamplifiers, power switches, low-voltage analog circuits, motor controllers and power inverters, and motor drive control IC applications. Its unique low on-state resistance and fast switching capability, as well as its ability to operate at low gate-source voltages and wide operating temperature, make it an ideal choice for these applications. The working principle of the SIRA62DP-T1-RE3 is based on the principles of electrical charge in a semiconductor material, and its operation must be carefully monitored to prevent damage to the device.

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