SIRA80DP-T1-RE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9530pF @ 15V
Vgs (Max):	+20V, -16V
Gate Charge (Qg) (Max) @ Vgs:	188nC @ 10V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	0.62 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SIRA80DP-T1-RE3 is an insulated-gate bipolar transistor (IGBT) designed for high frequency and high efficiency applications. It is a three-terminal device that consists of two to three p-channel and n-channel MOSFETs connected in series, and is also known as a "double-double-ended" IGBT. Its main application field is in high-voltage switching and motor control, where its advantages over traditional bipolar transistors make it a better choice. Its higher power density and lower on-resistance make it an attractive choice for industrial motor control, while its higher switching speeds enable it to be used in high frequency applications such as power supplies and converters.The SIRA80DP-T1-RE3 has two operating modes: low-side and high-side. Low-side mode is where the gate of the transistor is connected to a low voltage. This mode is used when the transistor is controlling a load in the same direction as the gate voltage. The high-side mode is when the gate of the transistor is connected to a higher voltage than the load. In this mode, the transistor can control the load in the opposite direction to the gate voltage, and this is used when the load needs to be reverse biased.The working principle of the SIRA80DP-T1-RE3 is based on the principle of charge control and modulated switching. When a voltage is applied to the gate, it creates a strong electric field, which draws electrons from the drain region and into the source region. This creates a depletion zone of negatively charged electrons around the gate of the transistor and a layer of positive charges around the source region. As the gate voltage is increased, these charges are attracted to the gate region, and this causes a current flow through the transistor. This current flow can be modulated by changing the gate voltage, and this is how the transistor can be used to control the flow of current through a load.The SIRA80DP-T1-RE3 is a versatile device that can be used in a variety of applications, from motor control and high frequency switching to high voltage switching applications. Its high power density and low on-resistance make it an attractive choice for industrial motor control, while its higher switching speeds enable it to be used in high frequency applications such as power supplies and converters. It has excellent reliability and can be used in a wide range of temperatures, making it a great choice for high power applications.

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