SIRA90DP-T1-RE3

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The SIRA90DP-T1-RE3 is a type of Single field-effect transistor (FET) built using advanced MOS technology. It is designed for static amplification, and is ideal for applications where power consumption is essential, such as portable devices and small form-factor systems. The SIRA90DP-T1-RE3 is an enhancement mode MOSFET, meaning that it requires an input signal to switch the drain-source current flow. This provides superior control and low power consumption, in comparison with depletion mode devices.

The SIRA90DP-T1-RE3 has a drain-source breakdown voltage of 90V, a maximum drain-source current (DSP) of 7A, and an on-resistance (Ron) of 3 mΩ. Additionally, it can handle a power dissipation of 34.2 W, which is supported by a smaller thermal resistance between junction and ambient air environments. It also has an extremely low gate-source capacitance of 8 pF, allowing it to be used with different types of circuits, such as switching and level-shifting.

The working principle of SIRA90DP-T1-RE3 is fairly simple. The device has a P-channel MOSFET, which operates by turning-on the drain-source current when a positive gate-source voltage is applied. This causes a current to flow from the source region to the drain region, activating the channel and producing an amplification of the input voltage. The device also has an internal protection mechanism, which shuts off the channel when the current reaches a predetermined limit and the heat generated by the current reaches a certain threshold.

The SIRA90DP-T1-RE3 is ideal for use in a variety of electronic components such as amplifiers, level shifters, power supplies, and voltage regulators. It can be used to control the electric current of an electronic device, allowing the device to be turned on or off, or to provide a voltage or current signal. It can also be used to adjust the threshold values in a circuit, providing accurate control and high signal fidelity.

The SIRA90DP-T1-RE3 is a versatile and reliable device, combining the high performance of advanced MOS technology with low power consumption. It has a wide range of applications, and is ideal for use in portable and small form-factor systems. With its excellent characteristics and reliable operation, the SIRA90DP-T1-RE3 is an excellent choice for single-field FET applications.

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