BSS169H6906XTSA1

Vgs(th) (Max) @ Id:	1.8V @ 50µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	68pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.8nC @ 7V
Series:	SIPMOS™
Rds On (Max) @ Id, Vgs:	6 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSS169H6906XTSA1 is a N−Channel Enhancement Mode MOSFET, used in a variety of applications ranging from load switching to control applications, amplifying the signal, signal processing, and power supplies.This device is capable of providing a high degree of efficiency while consuming low levels of power and generating low levels of heat due to its thin-film, low-profile construction and its Insulated Gate Bipolar Transistor (IGBT) design. It also has a fast rise and fall time, meaning that it requires less current to switch and can thus reduce the power consumption of the system.A MOSFET is an insulated gate field effect transistor which works using the principles of quantum effect modulation to control electric current flow. The quantum effect modulation is what makes this transistor so special since it does not rely on conduction to regulate current flow. Instead, the MOSFET depends on a gate voltage to vary the current flow in the channel between the source and the drain.When the gate voltage is low, the current flow is shut off, and when the gate voltage is high, the current flow is either limited or unrestricted, depending on the type of MOSFET being used. This makes the BSS169H6906XTSA1 suitable for applications that require precise control of current flow, such as load switching and signal amplification.In load switching, this MOSFET serves to control the load current. It can be used to adjust the current in the circuit by controlling the voltage applied to the gate or applying an external voltage to the gate. This transistor is also used to limit the amount of current being supplied to a load by setting the maximum current through the channel. This functionality is also useful in load protection applications, as it prevents too much current from reaching the load.In amplifying the signal, this MOSFET operates like any other transistor by amplifying the signal between the source and the drain. It is capable of providing a large gain, making it suitable for amplifying weak signals. The small package size of the BSS169H6906XTSA1 makes it ideal for signal processing applications, where the space is often limited and the signal needs to be amplified accurately.Moreover, it can also be used in power supplies since it is capable of withstanding large currents without any significant losses. By controlling the current, it can be used to regulate the voltages of different protocols and ensure the stability of the system.The BSS169H6906XTSA1 is a versatile MOSFET due to the fact that it is a thin-film, low-profile device with an IGBT design. It has a wide range of applications, ranging from load switching to control applications, amplifying signals, signal processing, and power supplies. Its fast rise and fall time makes it an ideal choice for applications which require precision current control operations, as well as low power consumption.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description