BSS123NH6433XTMA1

Vgs(th) (Max) @ Id:	1.8V @ 13µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	20.9pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.9nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	6 Ohm @ 190mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	190mA (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The BSS123NH6433XTMA1 transistor is a FET (Field Effect Transistor) of the single type, specifically the N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is employed in a wide variety of applications, ranging from power management applications to audio system design to power amplifier design. In this paper, we will discuss the BSS123NH6433XTMA1 transistor\'s application field, working principle, and its advantages over other transistors.

Application Field

The BSS123NH6433XTMA1 is a commonly used power management MOSFET, suitable for a variety of automotive, industrial, audio and video, lighting, and home appliance applications. It is specifically suitable for applications with high operating temperature, high humidity, and high voltage. Examples of applications where the BSS123NH6433XTMA1 can be employed include switching power supplies, DC/DC converters, motor and fan controllers, overvoltage protection circuits, load switching alternatives and load switches in power amplifiers. It can also be used in mobile device power management and high-side current sensing applications.

Working Principle

The working principle of the BSS123NH6433XTMA1 starts with the creation of a channel between the drain and the source. This channel is formed by the application of a voltage to the substrate (a position between the source and the drain) from the gate, which is known as the gate voltage. When the voltage applied to the gate is greater than the voltage between the drain and the source (known as the ‘threshold voltage’), electrons in the substrate begin to accumulate, forming the channel. This accumulation of electrons keeps the channel activated until the voltage between the gate and the substrate falls below the threshold voltage, allowing the electrons in the substrate to start flowing back to the source. The same process is repeated as soon as the voltage between the source and the gate rises above the threshold voltage again. This process is commonly known as the ‘switch-on/off’ process, as the transistor is being switched on and off according to the supplyvoltage.

Advantages of the BSS123NH6433XTMA1

The BSS123NH6433XTMA1 offers some unique features over other transistors. It has an integrated gate protection diode which helps to reduce gate voltage oscillation and noise. The high breakdown voltage and reliable performance of this transistor make it suitable for applications in which high levels of power are encountered. Thanks to its small size and low cost, the BSS123NH6433XTMA1 is also suitable for large-scale applications. The device is also highly efficient, able to withstand a power dissipation of over 6 W and operating temperature range of -55°C to 165°C. The wide temperature range and high power dissipation capacity make the BSS123NH6433XTMA1 a great choice for automotive, industrial, and lighting applications.

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