
Allicdata Part #: | 1727-1143-2-ND |
Manufacturer Part#: |
BSS138PW,115 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 320MA SOT323 |
More Detail: | N-Channel 60V 320mA (Ta) 260mW (Ta), 830mW (Tc) Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.04082 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TA) |
Power Dissipation (Max): | 260mW (Ta), 830mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 320mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A BSS138PW transistor is one of the most significant and popular forms of Field Effect Transistors (FETs) that is currently used for a variety of applications. This type of transistor is also known as a P-channel MOSFET, and it utilizes a metal-oxide semiconductor (MOS) technology. The transistor uses either a drain-source or gate-source voltage to regulate the amount of current flowing through the device. As a result, it is able to achieve much higher power dissipation than a bipolar junction transistor (BJT).
This form of transistor is characterized by the way in which it behaves. While the bipolar junction transistor (BJT) will act like a switch, the BSS138PW transistor works more like a variable resistor. This means that the device can also vary its output by adjusting its gate voltage. As such, it can be used to control current flow in various consumer and industrial applications.
The most common applications for the transistor are associated with digital integrated circuits, or ICs. It can be used to create voltage outputs with a wide range of voltages. For example, a P-channel MOSFET can be used for the output buffer of a 3.3 volt integrated circuit, allowing the output voltage to be varied from 0 to 3.3 volts. It can also be used to drive logic states, such as in high-speed memory designs.
The metal-oxide semiconductor technology that is used in the construction of the BSS138PW transistor enables it to provide high frequency operations, low power consumption, and low noise. It also possesses an extremely low on-resistance, which is optimal for applications where high current is needed. Additionally, the fact that the device requires no additional gate voltage for operation is a bonus for designers looking to reduce power consumption in their final product.
In order to understand its working principle, one must first understand the structure of this type of transistor. The transistor is constructed from a drain, a source and a gate. When a voltage is applied to the gate, it allows a current to flow from the drain to the source. The voltage applied to the gate can be used to control the amount of current flowing through the device. The current can be considered as an analogue of the voltage applied to the gate, and thus provides considerable control over the output current.
The BSS138PW transistor can also be used as an amplifier. When used as such it is referred to as a source-follower. The source-follower is simply a device that amplifies the input signal before it is sent to the output. As the transistor amplifies the signal it also reduces the voltage gain. This feature can be used in applications where low distortion is desired.
The BSS138PW transistor is widely used in a variety of industrial and consumer applications due to its many advantages. The transistor is capable of providing high frequency operation, low power consumption, and low noise. It also has an extremely low on-resistance, optimal for applications where high current is needed. Additionally, the fact that the device requires no additional gate voltage for operation makes it ideal for reducing power consumption in many electronic designs.
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