BSS127S-7 Discrete Semiconductor Products

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The BSS127S-7 is a high-performance, compact, low on-resistance, low power consumption, logic-level enhancement-mode field-effect transistor (FET). It belongs to the “Single” type of MOSFETs, and features a wide variety of applications in many different fields.

In terms of its physical characteristics, the BSS127S-7 has a compact package, consisting of a single-gate, dual-drain device, with a total of 3 pins. It has a low on-state drain current, and is capable of operating at low gate drive voltages. The low drain-to-source voltage (VDS) of the device, combined with its low RDS(on) makes it particularly well-suited for logic-level switching applications.

The working principle of the BSS127S-7 is based on the concept of a static electric field, which is generated by the gate electrode to control the flow of current from the drain to the source. When the gate voltage (Vg) is below the threshold voltage (Vth), the FET is in the off-state, and no current can flow through the channel. Conversely, when the gate voltage is above the threshold voltage, the device is in the on-state, and current flows between drain and source.

In terms of its application field, the BSS127S-7 is a versatile device which can be used in a variety of settings. It is often used as a high-speed switch in digital and analog circuits, as an amplifier in radio-frequency circuits, and as an interface switch in consumer electronics and other low-voltage applications. It can also be used as a high-speed logic gate for logic-level switching.

Overall, the BSS127S-7 is an ideal device for a wide range of consumer electronics, automotive, and industrial applications. Its accurate logic control, combined with low power consumption and low on-resistance makes it a highly desirable choice for high-performance, low-voltage switching applications.

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