BSS123E6327 Discrete Semiconductor Products |
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Allicdata Part #: | BSS123INTR-ND |
Manufacturer Part#: |
BSS123E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 170MA SOT-23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS123E6327 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.8V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 69pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.67nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSS123E6327 is a type of MOSFET, which is a type of transistor. It is an enhancement mode N-channel Field Effect Transistor (FET). The FET is a type of transistor which uses an electric field to move electric current.
The BSS123E6327 can be used in many high power applications, such as motor control, power management, and power conversion. The FET is well suited to many of these applications because of its low on-resistance, low gate-source voltage, and high power dissipation capability. The device is suitable for use in a variety of applications including switching, amplifying, and power control.
The working principle of the BSS123E6327 is based on the concept of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This is a type of transistor which uses an electric field to move electric current. The MOSFET is constructed from a metal gate, and underlying source and drain regions, upon a semiconductor material.
The BSS123E6327 works by creating a channel between the source and drain regions using the electric field generated by applying a voltage to the metal gate. When the gate voltage is positive, electrons are attracted to the metal gate, creating a conductive channel between the source and drain regions. This allows current to flow between the source and drain when an external voltage is applied.
The BSS123E6327 is also able to control the current flow through the device. This is achieved by varying the gate voltage, and thus changing the electric field created between the source and drain regions. By changing the gate voltage, the current flow can be altered, allowing for precise control over the current and voltage in a circuit.
The BSS123E6327 is a single-chip device, and has a wide variety of applications in the field of transistors, and FETs. The device has a low on-resistance, and a high power dissipation capability, making it well suited for many high power applications. Its superior performance and low power requirements make it an ideal choice for power control, switching, and amplifying applications, and many other electrical applications.
The specific data is subject to PDF, and the above content is for reference
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