BSS138-7

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The BSS138-7 is a single N-Channel MOSFET which is often used in digital switch and shaping applications. Its special features include small size and low on-resistance values, making it suitable for high-speed operation.

This MOSFET is a form of field-effect transistor. It is constructed with a dual-gate structure, meaning that it has two source/drain terminals and one gate terminal. The gate terminal is used to control the current flowing through the source/drain terminals. By varying the electrical charge placed on the gate terminal, the conductivity of the source/drain terminals can be controlled.

The BSS138-7 has an on-resistance of 7 ohms, meaning that it can carry a maximum current of 5A. Its small size and light weight make it well-suited for applications in which space & weight is a factor. Additionally, its low on-resistance values give it a high switching speed, allowing it to be used in high-speed digital switches and signal-shaping applications.

The BSS138-7 can be powered by any voltage between 2V and 20V. It has a maximum power dissipation of 500mW and a maximum junction temperature of 150°C. It also has excellent thermal properties, making it an ideal choice for applications requiring low power dissipation.

With its low on-resistance, excellent thermal performance, and small size, the BSS138-7 is well-suited for a variety of digital switch and signal-shaping applications. These include motor control, power supply design, solid-state relays, and more. Its dual-gate structure allows it to be used in a variety of configurations, making it extremely flexible.

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