BUK751R8-40E,127

Series:	Automotive, AEC-Q101, TrenchMOS™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	145nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	11340pF @ 25V
FET Feature:	--
Power Dissipation (Max):	349W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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Transistors - FETs, MOSFETs - Single

BUK751R8-40E,127 is a single N-channel enhancement mode silicon gate field-effect transistor, also known as a MOSFET. This type of MOSFET is mainly called a low-voltage power MOSFET and is designed for a wide range of applications, including power suits. This transistor is an efficient power switch which requires only a small amount of power to change its operating state and it can act as an amplifier or an active rectifier.

Application Field

BUK751R8-40E,127 can be used in many different applications such as general-purpose power switch, high-speed switching, voltage step-down, and conversion of DC to AC. These transistors are available in small packages, providing high current upto 40A in a very small space. They operate efficiently up to 60V and can operate the switch at a frequency up to 350kHz. These transistors are also used in current-mode control circuits, due to their low on-resistance. In addition to their wide range of switches, these transistors can also be used in the field of telecommunication, where they can help form bi-directional data communication paths. This type of communication is useful in modem and T1/E1 applications, as well as analog and digital wireless applications.

Working Principle

The working principle of a MOSFET involves movement of free electrons from source to drain via a channel. This channel is formed by the presence of electric field, which is generated by a gate voltage. The voltage across the gate and source terminal defines the transistor state. The degree of current flowing from the source to the drain is largely governed by the gate voltage.When a positive voltage is applied to the gate of a BUK751R8-40E,127, the electric field induces a channel between source and drain. This allows electrons to flow from source to drain via this channel. The resistance of this channel is low, so the required amount of current flows smoothly, effectively acting as a switch.The associated manufacturer data sheet will provide operational details such as insulation resistance, temperature range, dissipation power and safety levels. This data is particularly important when operating a MOSFET outside of its specified voltage and temperature range, as this may cause device to malfunction or even fail. In conclusion, BUK751R8-40E,127 is a single N-channel enhancement mode silicon gate field-effect transistor. It is designed for a wide range of applications, including power suits. It operates efficiently up to 60V and can operate the switch at a frequency up to 350kHz. The working principle of this transistor involves movement of free electrons from source to drain via a channel. Care should be taken when operating this transistor outside of its specified voltage and temperature range, as this may damage the device.

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