BUK761R7-40E,118

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The BUK761R7-40E,118 is a vertical channel N-channel enhancement mode field effect transistor (FET) that has been designed for applications requiring low on-resistance and fast switching combined with an ESD protection. This type of transistor is a single FET, which is characterized by its low on-state resistance, fast switching and a low gate threshold voltage. It is suitable for use in digital and analog circuits, where low switching losses and high dynamic range are required.

The active area of the BUK761R7-40E,118 is formed of two layers of polysilicon and gate oxide. The gate of this type of transistor is a vertical channel N-channel FET. Its low on-resistance makes it suitable for low power digital and analog switching applications, while its low gate threshold voltage enables fast switching. The device is fabricated using advanced process and integrated circuit technologies to ensure reliable operation.

The working principle of the BUK761R7-40E,118 is based on the transfer of electrons from the source to the drain when a voltage is applied to the gate. When a voltage is applied to the gate, it causes a depletion of charge carriers in the channel, which reduces its resistance. As a result, current can flow through the channel from source to drain, when the source voltage is greater than the drain voltage. The on-resistance of the FET is proportional to the amount of charge transferred in the channel.

The main application field of the BUK761R7-40E,118 is in switching circuits. It is commonly used as a switch in low power digital and analog circuits, where it can achieve low switching losses and high dynamic range. It can also be used in buffer amplifiers, sample and hold circuits, logic level converters and other applications requiring low power and fast switching.

The BUK761R7-40E,118 is a high performance FET designed for applications requiring low on-resistance and fast switching combined with ESD protection. It is suitable for use in digital and analog circuits, where low switching losses and high dynamic range are required. The device is manufactured using advanced process technologies, providing reliable operation.

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