Allicdata Part #: | 568-9711-2-ND |
Manufacturer Part#: |
BUK78150-55A,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 5.5A SOT223 |
More Detail: | N-Channel 55V 5.5A (Tc) 8W (Tc) Surface Mount SOT-... |
DataSheet: | BUK78150-55A,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK78150-55A,115 is a Vertical DMOS Fet, in a PG-TO-220-3 housing. This transistor belongs to the category of Transistors - FETs, MOSFETs - Single, as this type of transistor is a single layered, vertical DMOS FET. This vertical DMOS FET does not use other elements to form a three-terminal structure and is able to implement various switching methods.The BUK78150-55A,115 has a drain source voltage of 55 volts, a maximum drain current of 115 amps, and a maximum drain-gate voltage of 12 volts. Other features include its very low RDS(ON) of just 0.0081 ohm, making it highly efficient and ideal for medium and high power handling. This transistor has a global customer base, because of its easy to use, straightforward design.
This type of transistor can be used in many applications such as motor control, audio devices, office and communications equipment, home appliances, power conversion, and power supplies. It is also suitable for automotive and transportation systems as well as for industrial automation.The working principle of a vertical DMOS FET is relatively simple. This type of transistor has a source contact, a body region, a gate contact, and a drain contact. The source contact is used to provide electrons to the body region from the source. The body is the semiconductor device that uses conventional doped polysilicon finite layer structures to link the source contact to the gate contact. The gate contact is connected to a gate electrode, which is used to control the charging and discharging of electrons in the body region. Finally, the drain is connected to a drain electrode, which allows the electrons to flow from the body region to the drain contact. The amount of electrons flowing is determined by the applied gate voltage, thus controlling the drain current.
The BUK78150-55A,115 can be easily integrated into various designs due to its simple and straightforward configuration. Its low RDS(ON) value and its superior heat dissipation makes it ideal for medium and high power applications. While it is primarily used for motor control, audio devices, and home appliances, its versatility makes it applicable in any situation where a discreet and efficient transistor is required.Moreover, its superior reliability, long-term durability and wide power range make it an ideal choice for various architectures or applications. The BUK78150-55A,115 provides a reliable, cost-efficient solution for applications requiring high power handling, making it one of the most essential components in any design.
The specific data is subject to PDF, and the above content is for reference
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