BUK754R3-75C,127

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The BUK754R3-75C,127 is an advanced, single N-channel, Logic-Level field-effect transistor. This transistor is designed to be used in a wide variety of applications where a robust, versatile and dependable switching device is needed. In this article, the application field, working principle and its advantages of this particular part of the BUK754 family will be discussed.

Application Field of BUK754R3-75C,127:

The BUK754R3-75C,127 is an ideal choice for applications such as a low-power amplifier, low-noise output switch and level regulator. It can be used for audio, automotive, data communication, industrial, medical, and telecommunication applications. Moreover, it provides reliable and stable operation for mobile phones, electrical vehicles, digital home appliances, and multimedia systems.

Working Principle of BUK754R3-75C,127:

The BUK754R3-75C,127 is based on N-channel enhancement-mode technology. A major difference between the N-channel and other FETs is that it can be used to switch between two independently adjusted voltages when it is connected with the respective source and drain terminals. The gate terminal of this transistor is used as the input control to toggle the source and drain paths between an ON state and an OFF state. When the signal applied to the gate terminal is switched ON, the transistor turns OFF. Conversely, when the signal applied to the gate terminal is switched OFF, current flows from the source to the drain through a channel created between the drain and source terminals.

Advantages of BUK754R3-75C,127:

Because of the unique properties of N-channel enhancement-mode transistors, the BUK754R3-75C,127 offers several performance-related advantages. First, this device has a low on-resistance and rDS (on) of 1.08 Ω. This allows for a faster, more efficient switching of the paths. The device has a high input impedance of 26.9 KΩ and low capacitance of 0.391 pF. As a result, it can handle the higher switching frequencies required in modern equipment. Furthermore, it has an off-state leakage current of 0.2 μA, meaning it consumes less power while in an inactive state. Its high junction temperature of +150°C, wide operating voltage range of -60 V to +100 V and high static drain-source breakdown voltage of 300 V makes it an ideal choice for higher power electronics applications.

In conclusion, the BUK754R3-75C,127 is an excellent choice for a wide range of applications due to its reliable and efficient performance. From low-power amplifiers to high-power heteromagnetic switches, this part offers superior switching capabilities and durability in a low-power package. Its ability to handle higher switching frequencies, low off-state leakage current, and wide operating voltage range make this an ideal choice for any application requiring efficient operation in a reliable package.

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