BUK7E04-40A,127 Allicdata Electronics
Allicdata Part #:

1727-7227-ND

Manufacturer Part#:

BUK7E04-40A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A I2PAK
More Detail: N-Channel 40V 75A (Tc) 300W (Tc) Through Hole I2PA...
DataSheet: BUK7E04-40A,127 datasheetBUK7E04-40A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V
FET Feature: --
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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BUK7E04-40A is a common four-terminal FET that is used in a variety of applications. It is a type of single MOSFET, which means that its primary structure and form is composed of one MOSFET hanch, along with an additional gate on the top. This type of FET is known to offer very high switching speed, as well as a high degree of operational reliability. As such, these features make it one of the more popular FETs available on the market today.

The primary application fields of BUK7E04-40A FETs is in the field of switching applications, however, it can also be used for a number of other fields. These include, but are not limited to, power supply circuits, power converters, RF and microwave circuits, load switching circuits, rectifier applications, and many more. In fact, it can be used in any circuit where high speed, reliability, and small size is applied.

The basic principle of operation of BUK7E04-40A FETs is relatively simple. When a voltage is applied to the gate, it creates a channel between the electrodes. This channel allows current to flow between the source and drain terminals. The current flow and the amount of current flow is dependent on the input voltage, as well as the state of the channel. For example, if the gate voltage is increased, the current flow will be increased.

One of the advantages of BUK7E04-40A FETs is that they can cater to a wide range of operating frequencies. As such, they can be useful in many low-frequency applications, as well as those at high frequencies. Furthermore, these devices are generally quite stable and have a low noise gain, meaning that they can be used in sensitive systems, such as RF and microwave circuits.

In terms of performance, these FETs have an insulated gate voltage rating of `4V, an insulation resistance of `100V, and a maximum power dissipation of `2.2W. Additionally, their drain-source breakdown voltage ranges from `60V to `100V, allowing them to be used in circuits with high voltages. Finally, they also have a low on-state resistance and a low temperature coefficient, making them suitable for high speed switching applications.

Overall, BUK7E04-40A FETs are a highly reliable type of single MOSFET. They are very suitable for high speed switching applications and can also be used in a wide range of other fields where reliability and small form factor is important. In addition, their low noise gain and low temperature coefficient make them suitable for use in sensitive systems.

The specific data is subject to PDF, and the above content is for reference

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