BUK7513-75B,127

BUK7513-75B,127 Application Field and Working Principle

The BUK7513-75B,127 is a single-N-channel logic enhancement mode power MOSFET, well-suited for a wide range of applications that require low on-state resistance and large load capacity. This MOSFET is suitable for small power drive circuits used in battery-powered products and equipment such as notebooks, cell-phones and digital equipment, including those based on Automotive Electronics. In this article, we will explore the application field and the working principle of BUK7513-75B,127.

Application Field of BUK7513-75B,127
The low on-state resistance enabled by this MOSFET can be used to decrease power losses during switching. This will allow batteries on highly efficient equipment to last for longer. The BUK7513-75B,127 can also be used for switching circuits in consumer products such as lighting and audio systems, telecommunications, networking equipment, and automotive equipment. This MOSFET is particularly suitable for low switching-speed, low gate voltage drive, and has enhanced noise immunity.

Working Principle of BUK7513-75B,127
MOSFETs are voltage-controlled devices, rather than current-controlled devices like BJTs. When the gate voltage is increased, a channel is created between the source and the drain. The channel region can be seen as a resistor between the drain and the source, and its conductivity can be adjusted by varying the gate voltage. As the gate voltage increases, the resistance between the drain and the source decreases, allowing more current to flow. When the gate voltage is decreased, the MOSFET will turn off, cutting off the flow of current between the drain and the source.

The BUK7513-75B,127 uses an N-channel enhancement mode design , where an electric current flows from the drain to the source when a positive voltage is applied to the gate. This MOSFET also utilizes a low on-state resistance, allowing for more efficient switching of power.

In summary, the BUK7513-75B,127 is a single-N-channel logic enhancement mode power MOSFET capable of providing low on-state resistance and a large load capacity. It can be used in many applications, such as battery-powered products, telecommunications, audio systems and automotive equipment. This MOSFET is specially designed to operate at low switching speeds and low gate voltages.