BUK7109-75ATE,118 Allicdata Electronics

BUK7109-75ATE,118 Discrete Semiconductor Products

Allicdata Part #:

568-9631-2-ND

Manufacturer Part#:

BUK7109-75ATE,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 75V 75A D2PAK
More Detail: N-Channel 75V 75A (Tc) 272W (Tc) Surface Mount SOT...
DataSheet: BUK7109-75ATE,118 datasheetBUK7109-75ATE,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-426
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Description

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The BUK7109-75ATE,118 is a type of Transistor - FETs, MOSFETs - Single. It is a high-performance, low-on-resistance P-channel Metal-Oxide-Semiconductor field-effect (MOSFET) transistor, making it a reliable choice for many applications that require a low-on-resistance. This transistor is designed to handle a larger amount of power than a standard MOSFET, making it especially suitable for use in high-power switching applications.

The BUK7109-75ATE,118 MOSFET comes with a range of features, such as its ultra-low on-resistance, high voltage ratings, high peak current, and fast switching speed. It also has a robust and durable construction that is resistant to mechanical stress. As it is based on the latest process technology, the BUK7109-75ATE,118 MOSFET is space-efficient and can be used in a range of applications.

The main application of the BUK7109-75ATE,118 MOSFET is in the power switching field. It can be used in many high-power switching applications, such as motor control, lighting control, industrial automation, and automotive power supplies. As it is designed for fast switching speeds, the BUK7109-75ATE,118 MOSFET is also suitable for use in digital circuit applications, such as microprocessors and digital signal controllers.

The working principle of the BUK7109-75ATE,118 MOSFET is based on the field-effect principle. When a voltage is applied to the gate of the transistor, it depletes the channel of mobile charges and creates a conducting path between the source and the drain. This creates a current flow, which is controlled by the voltage applied to the gate. As the voltage is increased, the current increases, and vice versa.

The BUK7109-75ATE,118 MOSFET has many features that make it a reliable choice for many applications. Its high-voltage rating, fast switching speeds, ultra-low on-resistance, and robust and durable construction make it suitable for use in many high-power switching and digital circuit applications. In addition, it is based on the latest process technology, making it space-efficient and cost-effective. Therefore, the BUK7109-75ATE,118 MOSFET is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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