BUK7909-75ATE,127

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BUK7909-75ATE,127

Application Field

The BUK7909-75ATE,127 is a Low-power N-Channel Enhancement mode MOSFET Transistor Module. Designed to deliver superior performance in the harshest environments, these transistors are characterized by high speed switching, typical RDS(on) of 24mΩ, low threshold voltage and gate charge, high gate-source hold-off voltage, robust SOA, as well as enhanced gate oxide reliability. Due to its excellent power efficiency and high current density, the BUK7909-75ATE,127 is suitable for a variety of applications, including high-speed automotive electronics, industrial power systems, and power supplies for optical networks.

Working Principle

The working principle of the BUK7909-75ATE,127 is rooted in the physical aspects of its construction. At the most basic level, the BUK7909-75ATE,127 is composed of an N-type semiconductor material sandwiched between two p-type semiconductor material. When a voltage is applied to the gate, the N-type material will become heavily doped, creating an inversion layer, while the P-type material remains undoped. The inversion layer acts as a channel between the source and drain, and current will be allowed to flow when the gate voltage is greater than the threshold voltage. The width of the channel is determined by the size of the inversion layer, and this is determined by the gate voltage.

At the same time, the gate-source hold-off voltage ensures that the channel is inversely proportional to the gate voltage. This ensures the BUK7909-75ATE,127 is able to deliver consistent performance over a wide range of voltage and temperature. Finally, the BUK7909-75ATE,127 can operate at much higher speeds than other transistors, giving it a unique advantage in high-speed applications.

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