BUK7609-55A,118 Allicdata Electronics
Allicdata Part #:

568-9646-2-ND

Manufacturer Part#:

BUK7609-55A,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 211W (Tc) Surface Mount D2P...
DataSheet: BUK7609-55A,118 datasheetBUK7609-55A,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3271pF @ 25V
FET Feature: --
Power Dissipation (Max): 211W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The BUK7609-55A,118 is a product of Infineon Technologies, an international semiconductor company located in Neubiberg, Germany. It is a single N-channel Power MOSFET in Smart PowerSO-8 package, and it is designed to minimize switching losses and provide superior switching performance. It is suitable for high-power applications such as switched-mode power supplies, as well as for general purpose power switching.

The BUK7609-55A,118 is ideal for applications that require high power efficiency, reliability, and low on-resistance. It features a low gate charge of 18 nC, an RDS(ON) of 55 mΩ, a maximum drain source voltage of 100 V, and an operating temperature range of -55 °C to 150 °C. Furthermore, its small Smart PowerSO-8 package makes it a great fit for applications with high power density, while its low gate charge improves switching efficiency.

The working principle of the BUK7609-55A,118 is fairly straightforward. It contains an internal N-Channel Field Effect Transistor or FET. It operates by using the electric field between the source and drain to control the flow of current between them. When a positive voltage is applied to the gate, the transistor will be turned on, which will allow current to pass from the source to the drain. When the voltage at the gate is low, the transistor will be turned off, which will interrupt the flow of current.

Moreover, the BUK7609-55A,118 has many practical applications, ranging from automotive and industrial control boards and power supplies, to white goods and servers. In automotive, the device is suitable for buck, boost and buck-boost converters, as well as high-side and low-side switch applications. It can also be used in power systems, like solar inverters and motor drives. In industrial applications, it is used in voltage regulation circuits, as well as to drive high-current loads.

Overall, the BUK7609-55A,118 is a powerful single N-channel Power MOSFET in Smart PowerSO-8 package. It is designed to minimize switching losses and provide superior switching performance while its small package provides a great fit for applications with high power density. Furthermore, its practical applications range from automotive and industrial control boards, to power systems and voltage regulation. All these features make it a great choice for power switching and other power-related applications.

The specific data is subject to PDF, and the above content is for reference

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