BUK7K17-80EX

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta)
Vgs(th) (Max) @ Id:	4V @ 1mA
Power - Max:	64W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-1205, 8-LFPAK56
Supplier Device Package:	LFPAK56D

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BUK7K17-80EX Application Field and Working Principle

Introduction

The BUK7K17-80EX is a low gate threshold voltage vertical dual N-channel enhancement mode field-effect transistor (FET) array. It is specifically designed to be used in modern applications such as telecom and datacom, including current relays, switching control and low-power amplifiers. It is an important component used in the modern electronics industry, and is part of the BUK7K20 series from NXP Semiconductors.

Application Fields

The BUK7K17-80EX can be used in many applications. It can be used as a current relay for low-voltage applications, as it is capable of sensing even small current changes. It can also be used for switching control, as it has very low response time. It can furthermore be used in low-power amplifiers, due to its low power consumption. The BUK7K17-80EX is mainly used in telecom and datacom, because of its low power consumption, high integration, and low cost. It is suitable for multiplexers, power management, and other applications.

Features

The BUK7K17-80EX transistor array has a variety of features that make it suitable for modern applications. It has a low gate threshold voltage, which makes it suitable for switching applications, as it can quickly switch between low and high levels.The BUK7K17-80EX transistor array also has a high drive current capability, which makes it ideal for low-power applications. It has an extremely low power consumption, which further makes it suitable for multiplexers, power management, and other applications.The BUK7K17-80EX transistor array is also designed to be used in harsh environments, such as high humidity, temperature extremes and dusty conditions. It has an extended temperature range of -40°C to +85°C, so it can be used in demanding weather conditions.

Working Principle

The BUK7K17-80EX transistor array works on a simple principle. It is a vertical dual N-channel enhancement mode FET array, which consists of two NXP-FETs placed in series. The two FETs are driven using a single low-current gate. This allows the FETs to be switched on and off with very little additional current.When a low voltage is applied to the gate, the FETs close and the current passes between the two FETs. When a high voltage is applied to the gate, the FETs open and the current is blocked. This allows the transistor array to be used as a switch, allowing current to be controlled very precisely.

Conclusion

The BUK7K17-80EX is a low gate threshold voltage vertical dual N-channel enhancement mode FET array. It is suitable for telecom and datacom applications, due to its low power consumption, high integration and low cost. It is mainly used as a current relay for low voltage applications, for switching control and for low-power amplifiers. It works on the simple principle of a low voltage being applied to the gate to close the FETs, and a high voltage being applied to open them. The BUK7K17-80EX is an important component of modern electronics, and is part of the BUK7K20 series.

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