| Allicdata Part #: | FQA10N60C-ND |
| Manufacturer Part#: |
FQA10N60C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 10A TO-3P |
| More Detail: | N-Channel 600V 10A (Tc) 192W (Tc) Through Hole TO-... |
| DataSheet: |  FQA10N60C Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 192W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 730 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQA10N60C is a 600V 10A N-Channel PowerTrench MOSFET from Fairchild Semiconductor. It is housed in a TO-220 package. This robust power MOSFET, with an optimized gate design, has very low on-state resistance when operating at its rated current. As such, it offers high efficiency for all power conversion applications, especially for operation in switching-mode power supplies and motor applications.
The FQA10N60C PowerTrench MOSFET belongs to a series of Genera- Purpose N-Channel MOSFETs from Fairchild Semiconductor. It is designed to withstand repetitive voltage and current spikes, which eases the design of power conversion applications. In addition, it features low gate charge and low output capacitance, making it ideal for high-frequency switching applications.
The FQA10N60C PowerTrench MOSFET is mainly used in switching-mode power supplies and motor applications, mainly because of its low on-state resistance and optimized gate charge design. It allows efficient power conversion, since it has a low gate capacitance and low on resistance, which reduces switching losses. This MOSFET is also suitable for use in low-side switches, as its large capacitance ensures fast switching.
The working principle of the FQA10N60C PowerTrench MOSFET follows the same basic principles as all MOSFETs. A potential difference is applied between the gate and the source. As a result, a channel is created between the source and drain, allowing the passage of electric current. The extent of this channel is determined by the potential difference applied to the gate. Thus, by varying the gate voltage, the device can be used as a switch, allowing it to control the flow of current.
The FQA10N60C PowerTrench MOSFET is an efficient power device and has a variety of applications in switching-mode power supplies and motor applications. Its increased efficiency and reduced power dissipation allow it to be used in a wide range of high-power applications, such as automotive and industrial power conversion applications. Moreover, its low gate capacitance and low output capacitance make it ideal for high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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