FQA10N80C-F109

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The FQA10N80C-F109 featuring an 800 V, 10 A, 9 mΩ super Junction MOSFET is an ideal choice for the design and engineering of automotive, power management and industrial applications. Its advantages include low resistance, high efficiency, low EMI, and wide temperature range. This FET is well-suited for designs requiring a wide range of digital switching and power management applications.

Exploring its applications, the FQA10N80C-F109 is designed for a variety of industrial, automotive, and power management applications. The FET can power motor drives, industrial motor control systems, automotive body electronics, high-end audio systems and braking systems, heavy-duty welding, power conversion and supply systems, and engine control systems. The FET is also useful for secondary-side switching applications such as soft-start circuits and variable frequency drive systems.

Discussing its working principle, the FQA10N80C-F109 is a P-channel MOSFET with a drain-source voltage of 800 Volts and a current capacity of 10 Amps. The maximum rating of the FET is between 0 to +125 ¡C and its on-resistance is 9 mΩ. The FET has fast switching speeds and low gate charge (QG) which helps in reducing switching losses and improving overall efficiency of the system. The FQA10N80C-F109 offers excellent thermal performance and is protected against avalanche breakdowns; it also features excellent avalanche immunity and a low on-state resistance. Furthermore, the FET ensures EMI/RFI noise immunity.

Test and measurement for the FQA10N80C-F109 include the standard breakdown voltage tests to measure its maximum drain-source voltage, the gate threshold voltage test to measure the gate\'s threshold voltage with respect to the source voltage, the gate charge test to measure the current generated by the gate when the drain is being turned off, the gate-drain resistance test to measure the resistance between the gate and the drain, and the power dissipation test to measure the amount of power dissipated by the FET while operating.

In summary, the FQA10N80C-F109 is an 800 V, 10 A, 9 mΩ super Junction MOSFET designed for a variety of industrial, automotive, and power management applications. Operating at a drain-source voltage of 800 Volts and a current capacity of 10 Amps, the FET has fast switching speeds and low gate charge which helps in reducing switching losses and improving overall efficiency. It features excellent avalanche immunity, a low on-state resistance, and excellent thermal performance. Additionally, test and measurement for the FQA10N80C-F109 include the standard breakdown voltage tests, the gate threshold voltage test, the gate charge test, the gate-drain resistance test, and the power dissipation test.

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