FQA10N80

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The FQA10N80 is a high-performance, low-power N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which is used in various applications. The device utilizes a vertical D-MOS structure, allowing for better electrical characteristics and improved use of space for applications that require a high level of integration of devices.

FQA10N80 is well-suited for use in a wide range of power management, switching power supply, and high-speed, high-attenuation electronic devices such as audio amplifiers, LCD monitors, and DC switching power regulators. It is also used in applications where very low on-resistance and fast switching speed are required.

FQA10N80 has an 8-volt drain source breakdown voltage (BVDSS) and a 4.5-volt gate-source voltage (VGS) rating. It has an on-resistance of 8.3 milliohms max, a threshold voltage of 2.85V, an RDS(on) rating of 8.3mΩ, and an output current rating of 12A. It also has a temperature rating of -55°C to 175°C. The device is RoHS compliant and is made with lead-free soldering.

The application field of the FQA10N80 covers the main power supply such as DC/DC converters, bridges, AC-DC converters, electric cars, laptops, power supplies, AC adapters, lighting, and UPS backup systems. Its fast switching speed and low on-resistance also makes it ideal for various motor control applications including headphone amplifiers, audio preamplifiers, Class D amplifiers, and regulators.

The FQA10N80 operates on a simple gate control mechanism, wherein a positive gate voltage to source voltage (VGS) is applied to produce an electrical field between the source and the gate. This electrical field attracts holes (mobile carriers) from the P-type material near the junction and repeals electrons from the N-type material. This creates a two-dimensional channel across the device, allowing electrons to flow between the source and the drain. The current flow is controlled by the gate voltage. As the gate voltage increases, the conductive channel becomes increasingly wider, allowing more electrons to pass through. The same mechanism also works in reverse when the gate voltage is reduced, resulting in a decrease in conductivity.

The FQA10N80 is a high-performance, low power N-channel MOSFET which is used in a variety of applications due to its low on-resistance and fast switching speed. This device is well suited for applications which require dual power capabilities and use in high attenuation and speed components such as LCD monitors and audio amplifiers. Its operating principle is through a gate-controlled mechanism, wherein an electrical field is created to attract carriers and allow current to pass.

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