FQA17P10 Allicdata Electronics
Allicdata Part #:

FQA17P10-ND

Manufacturer Part#:

FQA17P10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 100V 18A TO-3P
More Detail: P-Channel 100V 18A (Tc) 120W (Tc) Through Hole TO-...
DataSheet: FQA17P10 datasheetFQA17P10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQA17P10 is a state-of-the-art device designed for power management applications. It belongs to the family of Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It is a single-N-channel MOSFET device and it is optimized for operation at voltages from 4V to 15V.

The device provides a low RDS(ON) value which maximizes power savings. The FQA17P10 has the ability to withstand supply voltage irregularities and ESD (electrostatic discharge) stress. It is suitable for various applications such as power switching and lighting applications. It can also be used in automotive and industrial applications such as motor and solenoid control.

The FQA17P10 is designed using a cascoded structure for improved ESD performance and a low output capacitance for high frequency applications. The device is housed in a standard 4-pin plastic package. It has a maximum current rating of 10A and a dissipation of 1.5W. It also features low threshold voltage and fast switching speeds. The device also has a low on-resistance (RDS(ON)), which increases its power efficiency and helps to reduce power consumption.

The working principle of the FQA17P10 is based on the principle of the MOSFET. It consists of two p-type and two n-type regions. The source terminal is connected to the p-type area while the drain is connected to the n-type area. When a voltage is applied to the gate, an electric field is generated, allowing electrons to flow from the p-type region (source) to the n-type region (drain) without the need to physically touch the gate. This causes the current to flow from the source to the drain.

The FQA17P10 is a valuable device for use in power management applications. It is designed to offer high efficiency and excellent performance. It is a reliable, robust, and cost-effective solution for a wide range of applications. It offers high power savings, low power dissipation, high output capacitance, fast switching, low threshold voltage, and ESD protection.

The specific data is subject to PDF, and the above content is for reference

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