Allicdata Part #: | FQA17P10-ND |
Manufacturer Part#: |
FQA17P10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 18A TO-3P |
More Detail: | P-Channel 100V 18A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | FQA17P10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA17P10 is a state-of-the-art device designed for power management applications. It belongs to the family of Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It is a single-N-channel MOSFET device and it is optimized for operation at voltages from 4V to 15V.
The device provides a low RDS(ON) value which maximizes power savings. The FQA17P10 has the ability to withstand supply voltage irregularities and ESD (electrostatic discharge) stress. It is suitable for various applications such as power switching and lighting applications. It can also be used in automotive and industrial applications such as motor and solenoid control.
The FQA17P10 is designed using a cascoded structure for improved ESD performance and a low output capacitance for high frequency applications. The device is housed in a standard 4-pin plastic package. It has a maximum current rating of 10A and a dissipation of 1.5W. It also features low threshold voltage and fast switching speeds. The device also has a low on-resistance (RDS(ON)), which increases its power efficiency and helps to reduce power consumption.
The working principle of the FQA17P10 is based on the principle of the MOSFET. It consists of two p-type and two n-type regions. The source terminal is connected to the p-type area while the drain is connected to the n-type area. When a voltage is applied to the gate, an electric field is generated, allowing electrons to flow from the p-type region (source) to the n-type region (drain) without the need to physically touch the gate. This causes the current to flow from the source to the drain.
The FQA17P10 is a valuable device for use in power management applications. It is designed to offer high efficiency and excellent performance. It is a reliable, robust, and cost-effective solution for a wide range of applications. It offers high power savings, low power dissipation, high output capacitance, fast switching, low threshold voltage, and ESD protection.
The specific data is subject to PDF, and the above content is for reference
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