FQA18N50V2 Allicdata Electronics
Allicdata Part #:

FQA18N50V2-ND

Manufacturer Part#:

FQA18N50V2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 20A TO-3P
More Detail: N-Channel 500V 20A (Tc) 277W (Tc) Through Hole TO-...
DataSheet: FQA18N50V2 datasheetFQA18N50V2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 277W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 265 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQA18N50V2 is a type of transistor that is classified as a single into FETs and MOSFETs. It is an advanced power switching device and is used in many applications. It is ideal for use in power supplies, mobile computing circuitry and other power electronics-related systems. This type of transistor is also used in switching motor drives, modems, and other micro-processor based applications.

The FQA18N50V2 features low on-state resistance, fast switching speed, and excellent gate charge characteristics. Its exceptional performance characteristics and low power consumption make it a perfect transistor for many different types of applications where high efficiency and low operational cost are desired.

The FQA18N50V2 features a built-in high performance internal gate drive circuit. This feature provides sufficient gate-source voltage to reliably turn on the power switch even when the applied gate-source voltage is low. The built-in driver circuit is capable of operating the FQA18N50V2 at 25-50V DC. In addition, it has an integrated current-limiting circuit that offers a degree of protection against over-current faults.

The FQA18N50V2 is also an excellent choice for applications such as DC-DC power converters, power converters used to control lighting, automotive power control systems, and various types of electronic equipment. Its high switching speed and low on-state resistance make it ideal for these applications.

The working principle of the FQA18N50V2 is quite simple. It is composed of a P-channel MOSFET and an N-channel MOSFET. When the applied gate-source voltage is low, the internal gate drive circuit is enabled, providing a sufficient voltage to turn on the FETs. The resulting current flows through the FETs and is diverted to the drain, providing the desired power. When the current transfer ceases, the internal gate drive circuit shuts off, allowing the FETs to turn off.

The FQA18N50V2 is ideal for many usage scenarios and is designed for low power cost and high efficiency. It has excellent performance characteristics, and its low power consumption ensures that it will be a reliable switching device for many applications. It is also an excellent choice for DC-DC power converters, motor controllers, and other microelectronic applications.

The specific data is subject to PDF, and the above content is for reference

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