FQA16N50 Allicdata Electronics
Allicdata Part #:

FQA16N50-ND

Manufacturer Part#:

FQA16N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 16A TO-3P
More Detail: N-Channel 500V 16A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: FQA16N50 datasheetFQA16N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 320 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQA16N50 is a field effect transistor (FET) which was specifically designed for high-power switching applications, such as those that require high frequencies and high current. It is a single enhancement mode N-channel MOSFET, which is what allows it to offer the high switching speeds and low gate charge needed for many power electronics applications. In this article, we will discuss the FQA16N50 application field and working principle.

FQA16N50 Application Field

Medical Robotics: The FQA16N50 can be used to improve the power performance of medical robots, as it is designed to switch loads quickly and efficiently with a high breakdown voltage. Its low on-resistance also ensures minimal power losses and helps reduce heat generation in electronic systems, thus making it a great choice for medical robotics.

High-Power Switching: The FQA16N50 is an excellent choice for high-power switching applications due to its low gate charge, high breakdown voltage, and low on-resistance. It can be used for applications such as DC-DC converters, power inverters, solenoid and motor drives, solar panel controllers, and other high-power switching applications.

Lighting: The FQA16N50 can be used for lighting applications as well. Its low gate charge allows for more efficient switching and its low on-resistance ensures that minimal power is lost during operation. This makes it a great choice for applications such as LED lighting and other dimming systems.

FQA16N50 Working Principle

The FQA16N50 operates on a single enhancement mode N-channel MOSFET. This type of FET is one of the most widely used transistors, as it has a low on-resistance (making it highly efficient) and a high breakdown voltage (which makes it well-suited for a wide range of applications).

The enhancement mode N-channel MOSFET works by applying a voltage to the gate of the transistor. This voltage causes a current to flow between the source and drain terminals, thus allowing the transistor to switch from an “off” state to an “on” state. When the transistor is in the “on” state, it can conduct current between the source and drain terminals, allowing the circuit to complete.

The FQA16N50 also features a low gate charge, which means that it can quickly switch from its “off” state to its “on” state. This makes it ideal for applications that require fast response times, such as high-power switching and medical robotics. Additionally, the FQA16N50 also has a relatively low input capacitance, which helps to reduce the noise generated by the circuit as well as making it easier to control.

Conclusion

The FQA16N50 is an excellent choice for high-power switching applications, medical robotics, and lighting applications. It features a single enhancement mode N-channel MOSFET with a low on resistance, low gate charge, and high breakdown voltage, allowing it to switch quickly and efficiently. The FQA16N50 also has a low input capacitance, making it easier to control and reducing noise. Overall, the FQA16N50 is a great choice for any application that requires fast switching and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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