FQA13N80-F109

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The FQA13N80-F109 MOSFET is a single-pole, single-throw device that is commonly used in electrical circuits to control current or voltage flows. It is a type of field-effect transistor (FET). FETs are three-terminal semiconductor devices that use an electric field to control current. The FQA13N80-F109 MOSFET has an operating voltage of 800 volts and a transconductance of 2.6 milliSiemens. It can handle a continuous current of 20 amps, and its drain-source breakdown voltage is 900 volts.

A MOSFET you can use to control the on/off state of a circuit. It is a unipolar device in that it only requires one polarity when applied; this polarity can be either negatively charged electrons or positively charged holes. When the voltage level of the gate terminal is below the threshold voltage, the MOSFET is off. When above the threshold voltage, the MOSFET is on and current flows between the source and drain terminals. This type of switching circuit is typically found in digital logic, motor control, AC and DC power supplies, signal switching applications.

The FQA13N80-F109 MOSFET is designed to provide the most effective combination of electrical and thermal performance. Its 800V rating allows it to perform in higher voltage applications, while its 20A current capacity makes it facility with switching heavy loads. The device also has a low output capacitance, which makes it suitable for high switching speed applications, as well as an extremely low alpha drain-source on-resistance of 13mΩ, which helps to minimize power consumption when the device is on. The low input capacitance also makes the FQA13N80-F109 well-suited to reset and amplification circuits, where high speed and low power dissipation are important.

The FQA13N80-F109 MOSFET is an ideal device for controlling current or voltage in a wide variety of applications. Its low on-resistance makes it an excellent choice for switching high current DC applications like power supplies, motor control, and signal switching. Its high voltage rating allows it to be used in a number of high voltage applications like digital logic, reset, and amplification circuits. Additionally, its low output capacitance makes it suitable for high frequency switching applications.

This MOSFET is also robust and reliable. It has a drain-source breakdown voltage of 900V, allowing it to be used in a variety of high voltage applications. Additionally, it has a high temperature operational limit of 175°C, allowing it to operate in high temperature environments. The device is epoxy molded, making it highly resistant to shock and vibration.

The FQA13N80-F109 is a versatile device that is well-suited for a wide range of applications. It combines excellent electrical and thermal performance with a robust and reliable design, making it an ideal choice for current or voltage control applications.

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