FQA16N50-F109

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Power metal oxide semiconductor field effect transistors (MOSFETs) play an essential role in the electronics industry. The FQA16N50-F109 MOSFET is one such specialized MOSFET, designed for applications demanding superior efficiency and power handling capabilities. This article will provide an overview of this significant electronic component, including its primary application field, as well as its working principles.

Overview

The FQA16N50-F109 is an N-Channel Depletion Mode MOSFET. It is specifically designed for applications that require superior power-handling, such as motor control circuits and switching AC loads. This component features a drain-source resistance of 0.16Ω, a drain current of 1.5A, a drain source voltage of 400V, a maximum pulse current up to 1.5A, an On-Resistance temperature coefficient of -3.3 mΩ/C, and an operating temperature range from -55 C to +150 C.

Applications

The FQA16N50-F109 is primarily designed for motor control applications, providing superior power-handling capabilities and high switching speeds. Its high breakdown voltage and low On-Resistance-temperature coefficient also make it suitable for use in power supply circuits and power switches.

In addition, the FQA16N50-F109 can also be used in various AC loads, inverters, power supply, and audio amplifier circuits. Its properties make it ideal for use in high current and voltage requiring applications, such as those found in electronic test equipment.

Working Principles

The FQA16N50-F109 is designed using a depletion mode MOSFET technology. This technology uses 2 MOS transistors, arranged in a vertical conduction path. The gate terminal of the first MOSFET corresponds to the gate of the second MOSFET, and when it is connected, it creates a vertical conduction path between the gate and the source of the FQA16N50-F109. This path is known as an Accumulation Region, and it helps reduce the On-Resistance of the MOSFET.

When a voltage is applied to the gate terminal, the Accumulation Region opens, allowing electrons to flow between the source and the drain of the MOSFET. This is known as the depletion mode, and it is the method used by the FQA16N50-F109 to control device current flow.

The FQA16N50-F109 is designed to handle high voltage and current applications. This is achieved by utilizing a number of protection features, such as over-temperature protection, inrush current protection, reverse biasing protection, and electrostatic discharge protection.

Conclusion

The FQA16N50-F109 is an N-Channel Depletion Mode MOSFET designed for applications requiring superior power-handling capabilities. It is suitable for use in motor control circuits, power supply circuits, power switches, as well as in AC loads, inverters, and audio amplifier circuits. Its features include a 0.16Ω drain-source resistance, a 1.5A drain current, and a 400V drain-source voltage. The FQA16N50-F109 utilizes a depletion mode MOSFET technology, in which a vertical conduction path is formed between the source and the drain of the MOSFET.

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