FQA19N20C

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FQA 19N20C is a fast, low-voltage, N-channel MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) with a high-performance level. The device is the flag-ship of a new generation of power MOSFETs, and is the latest development from Fairchild Semiconductor, Inc. It is suitable for use in a variety of applications, such as motor control, switching regulators, and other high-performance switching applications.

Applications of this device include motor control, switching regulators, load switching, DC-DC convertors, as well as switching power supplies. This device is particularly useful in automotive, computing, industrial, and communications applications where high performance, low-cost, and long-term reliability are desirable characteristics.

This MOSFET features a high current rating (QC = 20 A), a robust graphene oxide doping that enables low high-side gate leakage, a low turn-on voltage threshold (VOT = 2 V), a low resistance on-state (RON = 7 mOhm at VGS = 10 V), and a low power dissipation (PD = 1.6 W). With its high current carrying capability, this MOSFET has been designed for use in applications such as brushed motor control, line power control, DC motor control, and power converters. In addition, it has a low gate charge (QG = 5.4 nC) that reduces switching losses and increases efficiency in these systems.

The working principle of the FQA 19N20C is based on the principle of the MOSFET. This device is an enhancement-mode FET, meaning it can be switched on or off by applying a voltage to the gate terminal. By changing the voltage on the gate terminal, the current between the source terminal and the drain terminal can be manipulated to achieve the desired result. When a voltage is applied to the gate, the MOSFET changes the current flow between the source and the drain, depending on the magnitude of the voltage, resulting in an electric field in the device and allowing electrons to flow through the channel between the source and drain.

Furthermore, the device features a low-noise operation due to excellent ESD protection up to ±3,000V. This device can also be used for various high-performance switching applications due to its fast switching characteristics, which include a fast turn-on time (QT = 8 nSec), fast reverse recovery time (RR = 80 nSec). Additionally, this device has excellent temperature stability and performance remarkable at high temperatures up to 175°C.

The FQA 19N20C is a versatile device and is widely used in many applications. Its robust design and reliability make it an excellent choice for motor control and other high-performance switching applications. Its low turn-on voltage threshold, low on-state resistance, and high current rating make it ideal for these applications. In addition, its low gate charge and fast switching characteristics make it a desirable choice for switching regulators and power converters. This device provides a reliable solution to customers’ needs in the field of MOSFETs.

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