FQA170N06

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The FQA170N06 is a single n-channel enhancement mode Field-effect Transistor (FET) ideally suited for load switches, line drivers, level shifters and other switching applications that require the combination of good linearity and relatively low threshold voltage capability. This transistor is manufactured using a high-performance trench process technology and works on a continuous drain current of up to 4.3 amperes, with a maximum junction-to-case thermal resistance of 12.3°C/W. It uses a low capacitance, low on-resistance design which enables fast switching speed, which makes it ideal for audio switching applications.

The FQA170N06 has a breakdown voltage of 170 volts, a drive voltage of 8 volts, and a gate charge of 4.3 nano-coulombs. The threshold voltage of this transistor is 3.2 volts and the power dissipation rating is 20 watts. It features a high output impedance, low input capacitance, and low input gate delay, making it suitable for many electronic applications.

The FQA170N06 is built using an electric double layer gate oxide technology with an ESD protection circuit to protect it from electrostatic damage. The package size is 3x3mm, making it suitable for modern, small-sized applications. The package is RoHS compliant and is also compatible with lead-free soldering processes.

The FQA170N06 is an enhancement mode Field-effect Transistor (FET). The traditional FET switch is composed of a source and a drain, connected by a thin channel of n-type or p-type semiconductor material. With the FQA170N06, the source and drain are connected to each other through an additional layer of metal, called a gate. This gate is separate from the channel, and is connected to a separate terminal on the FET, called the gate terminal. When a voltage is applied to the gate, it modifies the conductivity of the channel and the FET acts as either an open switch or a closed switch, depending on the voltage applied to the gate. This is called an enhancement mode FET switch. The FQA170N06 also has ESD protection which helps prevent damage to the transistor in the case of a sudden surge in current.

The FQA170N06 is designed for use in a variety of different electronic applications such as load switches, level shifters, and line drivers. Its low on-resistance design enables faster switching speeds and its low threshold voltage and gate charge translates to higher efficiency and better performance in audio applications. The package is small and RoHS compliant, making it suitable for modern, small-sized applications. The FQA170N06 is a reliable and powerful transistor for many electronic applications.

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