FQA11N90

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The FQA11N90 is a common source field effect transistor (FET) with an N-channel metal oxide semiconductor (MOS). It is widely used in power switching applications and can be found in a variety of consumer electronics and industrial systems. In this article we will discuss the application fields and working principle of the FQA11N90.

Application Fields

The FQA11N90 is a versatile and reliable device for powering various types of electrical equipment. It is particularly ideal for high-current applications because of its low gate-source capacitance. The transistor’s low gate-source capacitance allows it to handle high-current pulses without entering a linear region where the gate-source voltage must be increased to get additional output current. Additionally, it has a high-current carrying capacity and a low threshold voltage, making it useful in voltage-controlled high-current applications.

One of the main applications for the FQA11N90 is in power switching. The transistor is often used to drive motors and other high-power devices. It can be used in power amplifiers and motor control circuits, as it can rapidly switch large currents. This makes it ideal for high-current motor control applications.

The FQA11N90 can also be used for low-voltage, or digital, applications. For example, it can be used as an output stage in a digital-to-analog converter. Digital circuits can often benefit from the FQA11N90 due to its low level of noise, its low gate-source capacitance, and its low threshold voltage.

The FQA11N90 is also a popular choice for RF applications. It can be used in RF switches and amplifiers, and because of its low-noise characteristics, it is ideal for high-frequency applications.

Working Principle

The FQA11N90 operates by controlling the flow of electrons between the source and the drain according to a voltage applied to its gate. When the gate-source voltage is low, the transistor is off, and no current will flow. When the gate-source voltage is increased, the transistor turns on, and current will flow from the source to the drain.

The amount of current that can flow through the transistor is determined by the amount of voltage applied to the gate. When the gate voltage is raised, more current is allowed to flow. This can be used to control the amount of power delivered to the load by controlling the gate voltage.

The FQA11N90 is an enhancement-mode transistor, meaning that it has an internal depletion layer between the gate and the underlying channel. This layer is partially depleted, allowing current to flow. When a voltage is applied to the gate, the layer is further depleted, allowing more current to flow.

As the name implies, the FQA11N90 is a single device, meaning it does not use multiple transistors to perform its function. This makes the device very simple, reliable, and cost-effective.

Conclusion

The FQA11N90 is a popular field effect transistor with an N-channel metal oxide semiconductor. It is widely used in power switching applications, such as high-current motor control and RF switches. Additionally, it is suitable for low-voltage digital applications and can be used as an output stage in a digital-to-analog converter. The working principle of the FQA11N90 is based on the controlled flow of electrons between the source and the drain according to a voltage applied to its gate.

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