Allicdata Part #: | FQA13N50C-F109-ND |
Manufacturer Part#: |
FQA13N50C-F109 |
Price: | $ 1.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 13.5A |
More Detail: | N-Channel 500V 13.5A (Tc) 218W (Tc) Through Hole T... |
DataSheet: | FQA13N50C-F109 Datasheet/PDF |
Quantity: | 795 |
1 +: | $ 1.78290 |
10 +: | $ 1.61091 |
450 +: | $ 1.15065 |
900 +: | $ 0.90901 |
1350 +: | $ 0.83422 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 218W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQA13N50C-F109 is a type of single field effect transistor or FET. It is also referred to as a metal oxide semiconductor field effect transistor, MOSFET for short.
A FET is a type of transistor that uses an electric field to control its conducting state. This makes them different from traditional bipolar transistors, which use electric current to control their conduction. FETs are often used in applications where robust switching performance is required, as well as low power consumption and high dynamic range.
The FQA13N50C-F109 is a low voltage MOSFET that can operate at a maximum gate to source voltage of 8V. It has a maximum drain current of 13A and is rated for a maximum of 500mW power dissipation. This design is also capable of delivering a much higher pulse current than is typically used in low current applications.
The FQA13N50C-F109 is suitable for a wide range of applications, including amplifier circuits, motor controls, switching converters, and other power management systems. For example, this type of device can be used in a step-down converter circuit to regulate the output voltage to the desired level. The low power consumption and high dynamic range of this type of device makes it ideal for use in battery powered portable devices such as cell phones and PDAs.
FQA13N50C-F109s work by applying a voltage at the gate that either allows or blocks current from flowing between the source and the drain. This is known as “gating” the transistor, and is what provides the device with the ability to switch the current flow on and off. Essentially, when the gate switch is in the ‘on’ position, current can flow from source to drain, and when the gate switch is in the ‘off’ position, no current can flow between the sources.
In general, when the voltage applied to the gate is below the threshold voltage, the transistor is in its OFF state.When the voltage applied to the gate is above the threshold voltage, the transistor is in its ON state.The threshold voltage is typically between 0.8 to 3V, depending on the specific transistor.
The FQA13N50C-F109 is a high voltage MOSFET, but it is still usually preferred over other types of transistors, such as JFETs, IGBTs and BJTs in many applications. The fact that it operates at very low voltage allows it to be used in applications that may not be suitable for other types of transistors. Additionally, the ability to switch large currents with relatively low control voltages is another important factor that makes the FQA13N50C-F109 ideal for many applications.
The FQA13N50C-F109 is a very versatile transistor that can be used in a wide range of applications. Its ability to provide precise switching performance, low power consumption and high dynamic range makes it an attractive choice for many designs. Its ability to drive large currents at very low voltages makes it suitable for many power management applications, such as step-down converters, amplifier circuits and motor controllers.
The specific data is subject to PDF, and the above content is for reference
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