Allicdata Part #: | FQA19N60FS-ND |
Manufacturer Part#: |
FQA19N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 18.5A TO-3P |
More Detail: | N-Channel 600V 18.5A (Tc) 300W (Tc) Through Hole T... |
DataSheet: | FQA19N60 Datasheet/PDF |
Quantity: | 128 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introducing the FQA19N60 MOSFET:
The FQA19N60 is an N-Channel vertical DMOS (double diffused metal oxide semiconductor) power field-effect transistor for use in various power conversion and power amplification applications. This MOSFET has high temperature operation and high input impedance, making it suitable for use in voltage regulators, motor control systems and other power conversion applications.
The FQA19N60 is designed for surface-mount technology (SMT) mounting and is available in a variety of packages including a plastic side-brazed surface-mount package and a dual-in-line (DIP) package. It can also be used in either a vertical mount or in a horizontal mount configuration.
Application Field:
The FQA19N60 MOSFET is suitable for applications such as DC/DC converters, motor control systems, voltage regulators, AC/DC converters and high-frequency power switches. It can be used in load switching and output switching applications, as well as high-speed back-to-back switching applications.
Working Principle:
The FQA19N60 MOSFET is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) technology, which uses an electrical field to control the current flow through a channel between the source and drain electrodes. When a voltage is applied to the gate of the MOSFET, the current flows between the source and the drain. The attenuation of the current is controlled by the voltage applied to the gate.
The FQA19N60 MOSFET has an N-Channel structure which provides an enhancement mode, in which the current between the source and drain increases as the voltage applied to the gate increases. This property enables faster switching times, higher efficiency, and better reliability than other standard MOSFETs.
The FQA19N60 MOSFET also has a high temperature range, which enables it to be used in applications that require the highest temperature operation. It also has low on-resistance and high current handling capabilities, making it suitable for high-power switching applications. The FQA19N60 also has low gate capacitance and low gate charge, which help reduce power losses, improve overall efficiency and reduce switching losses.
Conclusion:
In conclusion, the FQA19N60 MOSFET is a reliable and efficient device for use in various power conversion and power amplification applications. Its high temperature operation and high input impedance make it suitable for use in voltage regulators, motor control systems, DC/DC converters, AC/DC converters, power switches, and load and output switching applications. The FQA19N60 also has low gate capacitance and low gate charge, which help improve power efficiency and reduce switching losses.
The specific data is subject to PDF, and the above content is for reference
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