FQA13N50C

The FQA13N50C is a field effect transistor (FET) which belongs to the power MOSFET family. It is designed to be a high-current, high-voltage, low on-resistance power transistor providing fast switching and low gate capacitance. The FQA13N50C is created to fit the special needs of power management, such as DC/DC power supplies, switched mode power supplies, and high-voltage switching applications.

The FQA13N50C is a single, lateral, N-channel MOSFET transistor with an integrated interconnection between the drain, the source and the gate. It is constructed using a strain-junction field effect transistor (SJ-FET) and processed using the CMOS IC process. The FQA13N50C is designed to offer low on-resistance, which means there is less losses when transferring large currents. It can also be used in high-voltage power supplies as it can handle up to 100V.

The FQA13N50C operates using the same principle as other FET transistors. The switch is controlled by the gate. Brings the gate voltage between the source and drain close to the source voltage causes the transistor to turn on. This allows current to flow between the source and the drain, making it possible to switch, amplify and regulate power. The gate of the FQA13N50C can be voltage or current driven, depending on the application.

The FQA13N50C has a wide variety of applications, as its fast switching times, low gate capacitance and high current capabilities make it suitable for power management and switching. It can be used as a single switch to transfer current in DC/DC converters, switched mode power supplies, motor drive circuits and high frequency switching power supplies. It can also be used in distributed power systems, grid-tied inverters, high voltage amplifiers and LED lighting applications.

In summary, FQA13N50C is a single, N-channel MOSFET power transistor with low on-resistance, fast switching time and high current capabilities. It is used in a wide range of applications, from DC/DC power supplies to high frequency switching supplies and other power management applications. Its operation is based on the same principles as with most other FET transistors, in which the gate voltage brings the transistor to change its state between on and off.