Allicdata Part #: | FQA12N60-ND |
Manufacturer Part#: |
FQA12N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 12A TO-3P |
More Detail: | N-Channel 600V 12A (Tc) 240W (Tc) Through Hole TO-... |
DataSheet: | FQA12N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 240W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA12N60 is a N-Channel MOSFET with a maximum drain current of up to 12A and an on-state resistance of 6.6mΩ. It is designed for high speed, low-power applications and is used for DC-DC conversion, motor control and power management.
The FQA12N60 is a highly reliable, low-cost MOSFET with a wide range of operating temperatures. It is based on a new, innovative SuperMOSET fabrication process that has allowed the design of a robust and cost effective solution to a wide range of applications. The wide process window is also beneficial in terms of drain-source breakdown voltage and gate charge. The FQA12N60 is also equipped with an over current and over voltage protection circuit.
The FQA12N60 is constructed using a vertical, self-aligned trench isolation fabricated with a transistor having a floating-gate structure. This transistor is comprised of a Gate oxide, a source, and a drain. The Gate oxide is composed of two layers; one layer of insulating oxide and another layer of 4H-SiC or SiC, making it the first commercially available vertical MOSFET with SiC on its gate oxide. This material is beneficial as it can withstand high temperatures, allowing it to operate better at a higher junction temperature.
The FQA12N60 has several advantages over its predecessors. For example, it has reduced input capacitance, improved switch-on performance and increased frequency response. Additionally, its source-drain breakdown (VDD-VSS) voltage is twice that of its predecessor. The MOSFET also has an improved gate-drain (VGS-VDS) voltage which helps to reduce gate charge and reduce the drive voltage.
The FQA12N60 features an improved power dissipation rating for both its n-channel and p-channel transistors. This improved power dissipation allows for better switching performance and lower overall dissipation losses. Additionally, the FQA12N60 features a very low on-state resistance and a relatively low gate-source threshold voltage.
The FQA12N60 is ideal for applications such as high-speed, low-power switching, DC-DC conversion, motor control and power management. For example, the FQA12N60 can be used in automotive systems where it is used to control high current loads and/or convert between high and low voltages. It is also suitable for powering digital circuits such as mobile phones and laptops. Additionally, the FQA12N60 is a popular choice for use in solar panels and other renewable energy applications due to its high efficiency.
To sum up, the FQA12N60 is a high-performance, low-cost MOSFET that is ideal for applications such as high-speed, low-power switching, DC-DC conversion, motor control, and power management. It is beneficial for its high temperature performance, reduced input capacitance, improved switching performance, and low gate charge. Additionally, the FQA12N60 has a wide range of operating temperatures, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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