Allicdata Part #: | FQA13N50-ND |
Manufacturer Part#: |
FQA13N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 13.4A TO-3P |
More Detail: | N-Channel 500V 13.4A (Tc) 190W (Tc) Through Hole T... |
DataSheet: | FQA13N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 6.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.FQA13N50 is a type of junction field-effect transistor (JFET). It is made up of both p-type and n-type semiconductor material, forming a junction between them with a gate terminal. Also known as Channel Oxide Semiconductor Transistor (COS), JFETs are the earliest FETs available, developed prior to the invention of the metal-oxide semiconductor field-effect transistor (MOSFET).
The application fields of FQA13N50 are more varied than other FETs. It is mainly used in audio applications, amplifiers, frequency control and signal switching. FQA13N50 can also be used in low noise signal and power amplification. With an inherently high input impedance, low input bias current and fast switching speed, this type of FETs are suitable for a wide range of applications.
How does FQA13N50 work? FQA13N50 is an N-channel type of FET with a source, drain, and gate. The source and drain are both heavily doped n-type material contact points. This causes them to have high electrical conductivity. The gate consists of lightly doped n-type material, which is operated by the external gate voltage.
When a positive voltage is applied to the gate, electrons are drawn toward the gate and away from the source and drain. This sets up an electric field between the gate and the channel region, controlling the current flow through the FET. In this way, the device\'s conduction can be modified by controlling the gate voltage.
The FQA13N50 FET is capable of very high current gain. It also has low on-state resistance, which makes it capable of operating at much higher speeds than other FETs. It is also very efficient, with very low power dissipation levels. Additionally, the FQA13N50 has low noise characteristics which make it good for low noise amplification applications.
The main advantage of FQA13N50 over MOSFETs is the low input capacitance that allows for high speed switching. This allows it to be used in high frequency applications, or in circuits which require very high speed operation. Additionally, FQA13N50 has very low gate leakage current, which allows it to have a very low input bias current.
In summary, FQA13N50 is a type of single FET which offers excellent performance when used in audio applications, amplifiers, frequency control and signal switching. It also has low input capacitance, low gate leakage current and low power dissipation, making it a great option for low noise and high speed applications. FQA13N50 is a great choice for circuit designers looking for a reliable and efficient device in their circuit.
The specific data is subject to PDF, and the above content is for reference
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