FQA17N40 Allicdata Electronics
Allicdata Part #:

FQA17N40-ND

Manufacturer Part#:

FQA17N40

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 400V 17.2A TO-3P
More Detail: N-Channel 400V 17.2A (Tc) 190W (Tc) Through Hole T...
DataSheet: FQA17N40 datasheetFQA17N40 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQA17N40 is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high performance switching applications. It contains a floating body and is commonly used in applications such as motor control, power conversion, and power management.

FQA17N40 works on the principle of Quantum Tunneling. It is an electrical effect whereby electrons pass through a very thin layer of insulator, or barrier. In this case, the insulator is the gate oxide of the transistor. When the gate is positively charged relative to the channel, electrons become trapped tunneling across the channel through the oxide, and allowing electrical current to flow between the source and drain.

The FQA17N40 is often used in applications where fast switching and high efficiency are required while operating at very low voltage. It is ideal for use in high power applications such as motor controls, power converters, and ultra-high-frequency switching applications such as telecom systems. This is due to its ability to remain in the OFF-state at voltages as low as 4V and its low threshold voltage (VGS) of 1.8V, which enables high switching speed performance.

The FQA17N40 is also very efficient, with a maximum drain-source on-resistance (RDson) of 4mohms. This low resistance provides a low power path for current to flow, enabling higher current flows and consequently superior power handling capabilities. The FQA17N40 is also designed for low gate charge (Qgd) which can be important for achieving high switching frequencies.

Additionally, the FQA17N40 also come equipped with superior thermal performance ratings, with continuous drain-source current ratings up to 17A (Tc=25C) and low thermal resistance. This makes the FQA17N40 highly suitable for use in applications operating at high temperatures and higher power dissipation demands.

In summary, the FQA17N40 is an excellent choice for applications requiring fast switching and high efficiency at low voltages. Its low RDson, low voltage capabilities and superior thermal performance rating make it ideal for high power applications. Furthermore, its low gate charge provides high switching frequencies. And with its floating body design, the FQA17N40 is a great choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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