FQA13N80

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQA13N80 is a versatile field-effect transistor (FET) device designed for applications where high switching speed, low on-resistance, and fast switch-on and switch-off times are desired. It is a single, low-power MOSFET that is suitable for use in many different applications. The FQA13N80 can be used in a variety of medium to high-power electronic control systems such as DC/DC convertors, motor controller/drivers, and high-side switching power circuits. This article will discuss the FQA13N80 application field and working principle.

Applications and Benefits

The FQA13N80 is available in a TO-220 package and is ideal for applications where very low on-resistance, fast switching speed, and wide input voltage range are required. It is well suited for applications such as DC/DC convertors, motor controller/drivers, and high-side switching circuits. Due to its wide input voltage range, it can also be used in applications that require a more robust design. In addition, the small footprint of the FQA13N80 is ideal for use in space-constrained applications such as desktop computers and portable electronics.

The FQA13N80 offers a wide range of benefits. It has a low on-resistance of 80 mΩ, a fast switching time of 2 ns, and a wide input voltage range of 4.5 to 16 VDC. It also has a high surge current rating of 14.5 A, which makes it suitable for applications that require high current handling. In addition, the FQA13N80 offers very low thermal resistance of 0.5 ºC/W, making it ideal for applications that require good heat dissipation.

Working Principle

The FQA13N80 is a single, low-power MOSFET that uses insulated gate field-effect (IGFET) technology. This device consists of a single floating gate MOSFET that is used to control current flow through the device. The MOSFET has a source, gate and drain electrode, which is connected to the signal ground.

In operation, the gate of the MOSFET is positively biased while the source and drain electrodes remain at a zero voltage. When a positive voltage is applied to the drain electrode, electric current flows through the device. This current flow can be controlled by varying the bias of the gate. The amount of current flow is inversely proportional to the voltage applied to the gate.

When the bias voltage is increased or decreased, the current through the device is decreased or increased, respectively. By varying the gate voltage, the MOSFET can be used to switch application-specific devices on or off and provide a variable level of current control.

The FQA13N80 has a wide input voltage range of 4.5 to 16 VDC, which makes it suitable for use in applications that require high voltage and power operation. It also features a fast switching speed of 2 ns, which makes it well suited for applications where high switching speed is required. This device also has a low on-state resistance of 80 mΩ, which improves power efficiency and reduces power dissipation.

Conclusion

The FQA13N80 is a single, low-power MOSFET designed for applications where high switching speed, low on-resistance, and fast switch-on and switch-off times are desired. It offers a wide range of benefits, including a low on-resistance of 80 mΩ, a fast switching time of 2 ns, a wide input voltage range of 4.5 to 16 VDC, and a high surge current rating of 14.5 A. The FQA13N80 is ideal for use in a variety of medium to high-power electronic control systems such as DC/DC convertors, motor controller/drivers, and high-side switching circuits.

The specific data is subject to PDF, and the above content is for reference