Allicdata Part #: | FQA13N50CF-ND |
Manufacturer Part#: |
FQA13N50CF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 15A TO-3P |
More Detail: | N-Channel 500V 15A (Tc) 218W (Tc) Through Hole TO-... |
DataSheet: | FQA13N50CF Datasheet/PDF |
Quantity: | 534 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 218W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | FRFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQA13N50CF is a field effect transistor (FET) specialized for power electronic purposes. FETs come in many shapes and sizes and can be used for a variety of applications. The FQA13N50CF is a high-side large-signal MOSFET, meaning it is applicable to a variety of circuit topologies, from switching regulator control to load switches, from power sequencing circuits to pre-driver circuits. This type of power FET offers high efficiency, low-leakage, and low-voltage operation.
The FQA13N50CF power MOSFET is manufactured in the FQA13 (Fairchild Advanced Power MOSFET) package. The MOSFET consists of a standard MOSFET transistor in a planar outline, with two sections of gate electrodes. The gate is designed to control the channel\'s resistance as current flows through it. The source, drain and gate connection of the device are typically made with copper wire bonds to its lead frame.
Like all transistors, the FQA13N50CF can be used to amplify signals and to switch loads. A signal applied to the gate will control the resistance of the channel. When the gate voltage is reduced to the threshold voltage, the channel begins to conduct current. Increasing the gate voltage further increases the channel conductivity, up to a point known as the saturation limit. This is the point at which the drain-source current is at its highest.
Power applications of the FQA13N50CF typically involve controlling large loads, such as a motor or a large power circuit. It has the advantage of being able to switch quickly and use minimal power, making it an excellent choice for switching regulator circuits. The FQA13N50CF is also well suited for load switching applications, due to its ability to control large currents with excellent efficiency. Its low-leakage and low-voltage operation make it a great choice for power sequencing and pre-driver circuits.
In general, the FQA13N50CF power MOSFET offers excellent efficiency and reliability, making it an ideal choice for a wide range of applications. Its low-voltage and low-leakage operation make it suitable for a wide range of designs in power electronics. Its fast switching speeds and minimal power consumption also make it a great choice for both switching regulator control and load switching applications.
The specific data is subject to PDF, and the above content is for reference
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