Allicdata Part #: | FQA11N90C-ND |
Manufacturer Part#: |
FQA11N90C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 11A TO-3P |
More Detail: | N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | FQA11N90C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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TheFQA11N90C is an N-Channel Field-Effect Transistor (FET) designed with an advanced trench technology to provide an efficient switching solution for high speed and power applications. It is manufactured by Fairchild Semiconductor and is part of their PowerTrench product lineup. This FET is widely used in various electronic systems and features low ON-resistance, high breakdown voltage, and high gate threshold voltage. In this article, we will discuss the application fields and working principles ofFQA11N90C.
The FQA11N90C has been designed specifically for power management applications in portable and consumer electronics. It is suitable for applications such as DC-DC converters, high-end consumer systems, and high-power switching. It has a low-ON resistance of 0.0011 ohms, a high breakdown voltage of 900 volts, and a gate threshold voltage of 3.8 volts. These features make it well suited for applications requiring high efficiency, high power, and low switching noise.
The FQA11N90C is a three-terminal device comprising of a source, a drain and a gate terminal. All three terminals are connected to the current flow path. The current flow is modulated by the voltage applied to the gate. When a positive voltage is applied to the gate, the current flow increases while when a negative voltage applied to the gate, the current flow decreases. This type of device is called an “N-Channel FET” because current flows from its source to the drain in the form of electrons.
The FQA11N90C also has several important safety features. It has an ESD protection diodes built into the device, which ensures additional protection from electrostatic discharge damage. Additionally, it has a large body connected to the source terminal, which helps to reduce the power of any electric shock. The body also helps to reduce ringing on the gate at higher switching frequencies.
In addition to power management applications, the FQA11N90C can also be used in motor control applications. It can be used to control the speed of a motor by controlling the amount of current that flows through it. Additionally, it can be used in high-speed switching applications such as those found in communication systems.
In conclusion, the FQA11N90C is an efficient FET suitable for high speed and power applications. It has low ON-resistance, high breakdown voltage, and high gate threshold voltage. It is used in applications such as DC-DC converters, high-end consumer systems, and high-power switching. Furthermore, it has safety features such as ESD protection diodes and a large body connected to the source terminal. As such, theFQA11N90C offers a reliable solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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