HAT2174H-EL-E

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The HAT 2174H-EL-E is a single Depletion mode MOSFET manufactured by Harris Semiconductor. The device has a drain current rating of 4A and is designed primarily for use in pulse applications. The device has a drain-source voltage rating of 80V and a maximum gate voltage of 12V. The device is available in an SO-8 package and has a junction-to-ambient thermal resistance of 90°C/Watt.

MOSFETs are a type of Field Effect Transistor (FET) which has been the basis of modern switching devices since their introduction in the 1960’s. MOSFETs are used for their ability to switch large amounts of current quickly, with minimal power loss and minimal switching noise.

MOSFETs can be categorized into two distinct categories, depletion mode (D mode) and enhancement mode (E mode). In a depletion mode MOSFET, the device is typically turned on when the voltage at the gate remains at a low level, while in an enhancement mode, the device typically requires a higher gate voltage to turn-on. In the case of the HAT 2174H-EL-E the device is a depletion mode MOSFET, meaning that a low gate voltage is required to turn-on the device.

The HAT 2174H-EL-E is designed to be used for pulse applications, as it is able to switch large amounts of current with minimal power loss and minimal noise. The device also has a low quiescent current and a high pulse current capability. With its low gate voltages and high current handling capabilities, the HAT 2174H-EL-E is suitable for a wide range of pulse applications, including RF power amplifiers, power switches, and DC-DC converters.

The working principle of the MOSFET is based on the behavior of an electric current through a semiconductor when a gate voltage is applied. The gate acts as a capacitor, allowing current to flow between the source and drain when a positive gate voltage is applied. As the gate voltage is increased, the current between the source and drain increases as well.

Since the current flows through a semiconductor material, the resistance between the source and drain also changes when the gate voltage is changed. This change in resistance enables MOSFETs to be used to switch current on or off, depending on the gate voltage applied. The use of the device as a switch is one of the primary reasons why MOSFETs are so widely used in modern applications.

The HAT 2174H-EL-E has a drain-source voltage rating of 80V and a maximum gate voltage of 12V. These ratings are important for determining the maximum current that the device can handle as increasing the drain-source voltage or the gate voltage will cause an increase in the current flow between the source and drain.

The HAT 2174H-EL-E is designed for use in both digital and analog applications. In digital applications, the MOSFET is used extensively as a switch to control the flow of current in circuits. In analog applications, the device is often used as a voltage amplifying device, since the current through the device can be controlled by an external gate voltage.

The HAT 2174H-EL-E is an excellent choice for those seeking an efficient, reliable and cost-effective MOSFET solution for their applications. The device has a drain current rating of 4A, a drain-source voltage rating of 80V and a maximum gate voltage of 12V, making it an ideal choice for pulse applications as well as other applications that require high current capabilities. With its wide voltage range and low gate voltage requirement, the HAT 2174H-EL-E provides users with a reliable and efficient device for many of their power switching applications.

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