Allicdata Part #: | HUF75307D3-ND |
Manufacturer Part#: |
HUF75307D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 15A IPAK |
More Detail: | N-Channel 55V 15A (Tc) 45W (Tc) Through Hole TO-25... |
DataSheet: | HUF75307D3 Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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HUF75307D3 is an advanced power MOSFET chip. It features very low ON-resistance, higher current capability, higher breakdown voltage, improved thermal capabilities, and improved electrical characteristics. It is well-suited for use in applications requiring higher move speeds, such as in motor-control applications.
Brief Introduction and Features of HUF75307D3 Power MOSFET
The HUF75307D3 is an advanced double-diffused metal oxide semi-conductor field-effect transistor (MOSFET) and is widely used for high-voltage and high-current applications. It is available in a standard surface-mount plastic package, which makes it suitable for high-density and space-sensitive applications. The HUF75307D3 FET chip can provide substantial gain over other available FETs when both output voltage and power capabilities are considered.
The HUF75307D3 is an enhancement-mode power MOSFET with excellent linearity and high-speed switching performance. It contains high peak-current capability and enhance tolerance to Miller effect and avalanche. It has low gate-source capacitance and threshold resistance to ensure fast switching. It is based on the advanced planar technology and has excellent scalability.
The HUF75307D3 offers high performance and robust features such as excellent thermal resistance, higher current capability, higher breakdown voltage, improved electrical characteristics and high frequency response. It is part of MOSFETs lineup for high-end motor-control applications.
Application Field of HUF75307D3
The HUF75307D3 is a high-performance power MOSFET which can be used as a power switch in a broad range of applications. It is ideal for automotive, industrial, medical, LED light fixtures and appliances.
It is suitable for use in power converters, UPS systems, battery chargers, switch mode power supplies (SMPS), voltage regulators, direct current (DC) motor drives, electric vehicle (EV) systems, and electric power steering (EPS). It is also applicable for use in electric vehicles, electric bicycles and boats with high power requirements.
The HUF75307D3 has excellent noise immunity and can be used in a wide range of frequencies from DC to high range RF frequencies. It is well-suited for applications that require higher-speed switching and offers excellent thermal performance for motor-control applications.
Working Principle of HUF75307D3
The working principle of the HUF75307D3 is based on the MOSFET transistor structure. A MOSFET is an enhancement-mode transistorthat operates by using electric fields caused by the movement of electrons. It consists of source, gate and drain. When electric current is applied to the gate, it creates an electric field that turns on the transistor, allowing current to flow from the source to the drain.
The HUF75307D3 power MOSFET consists of an N-type and a P-type channel connected in series. This structure reduces switching losses and increases system efficiency. It also offers improved power capability, enhanced thermal characteristics, improved electrical characteristics and fast switching performance, which make it an ideal choice for high-speed switching applications.
The HUF75307D3 power MOSFET utilizes advanced TrenchMOS technology to provide the most efficient performance for power delivery. It also includes a unique dielectric system, which offers excellent breakdown voltages, fast switching performance, and reduced leakage. In addition, it features very low on-resistance and high-speed switching capability.
Conclusion
The HUF75307D3 power MOSFET chip is an advanced, cost-effective solution for high-voltage and high-current applications. It provides excellent linearity, high-speed switching performance, low on-resistance, higher current capability, and high breakdown voltage. It is ideal for motor-control applications and can be used in a wide range of applications, such as UPS systems, switching mode power supplies, voltage regulators, and electric power steering. The HUF75307D3 utilizes advanced TrenchMOS technology to provide the most efficient performance for power delivery.
The specific data is subject to PDF, and the above content is for reference
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