HUF76429S3ST Allicdata Electronics

HUF76429S3ST Discrete Semiconductor Products

Allicdata Part #:

HUF76429S3STTR-ND

Manufacturer Part#:

HUF76429S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 47A D2PAK
More Detail: N-Channel 60V 47A (Tc) 110W (Tc) Surface Mount D²P...
DataSheet: HUF76429S3ST datasheetHUF76429S3ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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HUF76429S3ST Application Field and Working Principle

HUF76429S3ST is a dual MOSFET, which belongs to single transistors, Field Effect Transistors (FETs). It was designed by products of Infineon Technologies AG and is used in many different application fields.

The HUF76429S3ST MOSFET combines low on-resistance and high breakdown voltage, making it an ideal choice for applications related to high current, high power, and high-voltage switching. In applications such as power factor correction circuits, motor drives, switch-mode power supplies, etc., HUF76429S3ST can act as a switching component. In the automotive sector, the MOSFET is suitable for adoption in the alternator voltage regulator, air brake, electronic throttle control and engine start/stop systems.

The HUF76429S3ST is a dual, N-channel MOSFET optimized with a low on-state resistance RDS(on) for low conduction losses in high-current power handling applications. It is a vertical double-diffused MOSFET (DMOS) chip, designed to provide a low on-resistance and high breakdown voltage, and has an attractive low profile that helps reduce power dissipation.

The working principle of HUF76429S3ST is based on “metal-oxide-semiconductor field-effect transistor (MOSFET)” technology, which mostly uses the gate voltage to control the on/off state of the chip. When a positive gate-to-source voltage is applied, the MOSFET is turned on, allowing the current to flow from drain to source and vice versa. On the other hand, when the gate voltage is negative, the MOSFET is turned off, cutting off the current flow. A relatively small gate voltage is sufficient to control the high current flow.

HUF76429S3ST is a sophisticated MOSFET that operates within safe limits even when exposed to a high inrush current (turn-on). The MOSFET is designed with the objective to preserve the safety margins while minimizing the dissipation and to maximize the current handling capability. Its efficient design allows the device to manage high power with minimal power losses.

The HUF76429S3ST is a suitable solution for high current, high power and high-voltage applications. Its low profile helps reduce the power dissipation, while its efficient design allows it to handle high current with minimal power losses. Additionally, its ability to handle inrush currents and switch on/off efficiently makes it a much more attractive option for many applications.

The specific data is subject to PDF, and the above content is for reference

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