Allicdata Part #: | HUF75343S3-ND |
Manufacturer Part#: |
HUF75343S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-262AA |
More Detail: | N-Channel 55V 75A (Tc) 270W (Tc) Through Hole I2PA... |
DataSheet: | HUF75343S3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 205nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75343S3 is a single discrete N-Channel MOSFET transistor specifically designed for use in consumer electronics applications. It is mainly utilized in load switching, lighting applications, DC-DC converters, level shifters and motor control circuits. This part is designed to handle high-power and high-current applications, making it ideal for commercial and industrial consumer electronics products such as TVs and other large consumer electronics. Features:
Application:The HUF75343S3 is mainly used as a switching device in consumer electronics. This part is mainly used in applications requiring high-current handling capabilities, such as load switching, lighting applications, DC-DC converters, level shifters and motor control circuits. It is also used to provide isolation in some audio amplifier circuits. Working Principle:MOSFET transistors work by modulating an electric field between the two terminals of a semiconductor. This electric field changes the conductivity of the channel between the source and drain electrodes of the MOSFET by manipulating the number of carriers available in the channel. The current through the circuit is controlled by modulating the voltage between the gate and source electrodes. The current through the drain electrode is controlled by the gate voltage. Package Information:The HUF75343S3 is a single discrete N-Channel MOSFET transistor that is packaged in a TO-220 package. This package has three legs and a tab for heat sinking. It is lead-free (RoHS compliant) and is provided in a tape-and-reel format for automated assembly processes. |
The specific data is subject to PDF, and the above content is for reference
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