Allicdata Part #: | HUF75345G3-ND |
Manufacturer Part#: |
HUF75345G3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-247 |
More Detail: | N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-2... |
DataSheet: | HUF75345G3 Datasheet/PDF |
Quantity: | 357 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 325W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 275nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The HUF75345G3 is a power field-effect transistor (FET) that is widely used in motor control and power switching applications. The FET is a high-voltage, low-Rds on, N-channel MOSFET rated at an impressive maximum drain source voltage of 250 V. This FET is designed to support high-performance power switching applications, with tank high-current capability and low gate charge characteristics.
The working principle of a FET is the same as other transistors such as bipolar transistors, or BJTs. The output voltage of the FET is controlled by the input voltage applied to the gate terminal. A voltage applied to the gate terminal causes a shift in the charge carriers that are induced in the channel region between the drain and source terminal. This shifts the voltage threshold of the FET and allows current to flow between the drain and source terminals as soon as the input voltage reaches the threshold. The current between the drain and source terminals can be controlled by the applied voltage and it is possible to switch the FET between on and off states. A FET can be used in its linear region too, just like a BJT. This mode of operation of a FET is useful in amplifying signals.
In motor control and power switching applications, HUF75345G3 FETs provide superior performance in terms of package size, power handling capability, low-gate charge and low on-resistance. The low-gate charge characteristic of the HUF75345G3 ensures that power consumption during gate switching is minimized and power losses during switching are kept at a minimum. The device is rated for a maximum Figure-of-Merit (FOM) of 88 mV-µs, which means that it can switch in an unbelievably short time, making it one of the fastest switching power FETs on the market.
The HUF75345G3 also offers reverse drain current blocking capability and it is one of the most robust power FETs on the market. The FET comes in a High Power Density SMD package and is rated for a maximum drain current of 45 A and a maximum drain power dissipation of 208 W.
The HUF75345G3 is an ideal choice for motor control and power switching applications due to its robust design, low gate charge figures, low on-resistance and high power handling capability. The device has wide usage in industrial, automotive, lighting and electronic devices markets and it is well suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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