Allicdata Part #: | HUF75637S3_NR4895-ND |
Manufacturer Part#: |
HUF75637S3_NR4895 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 44A D2PAK |
More Detail: | N-Channel 100V 44A (Tc) 155W (Tc) Surface Mount D²... |
DataSheet: | HUF75637S3_NR4895 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 155W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75637S3_NR4895 is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which means it regulates current flow by altering the electrical field. It is capable of switching high currents and voltages, making it one of the most common types of transistors used today.
N-channel MOSFETs are used as switches and amplifiers for electronic components. Their main use is high-frequency switching applications where their high switching speed and low internal resistance is beneficial. They are commonly used in amplifier circuits, motor control, power supplies, and in RF applications. The majority of digital ICs feature a MOSFET switch with a typical on-resistance of 10-20 ohms.
HUF75637S3_NR4895 is a single-gate enhancement mode MOSFET, which means it requires an external signal to turn it on. It can handle the highest power cycling of any MOSFET, making it ideal for applications such as motor control, audio amplifier, and high-power switching. Its on-resistance is extremely low, making it suitable for low power applications. The gate is designed to remain relatively unaffected by oscillations, making it more reliable under high switching frequencies.
The HUF75637S3_NR4895 features a break down voltage of -60 volts, allowing it to regulate currents in the range of up to -60V. It has a low gate-source capacitance of about 7000pf, making it suitable for high-frequency switching applications. It can also handle a switching frequency of up to 8MHz, making it ideal for audio power amplifiers and power supplies.
The HUF75637S3_NR4895 has a maximum junction temperature of 175°C and a maximum temperature rise of 65°C. It also has an RoHS Compliant lead-frame, making it environmentally-friendly. The device also includes a logic-level compatible gate threshold voltage, allowing it to easily detect the true or false state of digital signals.
In short, the HUF75637S3_NR4895 is a single-gate enhancement mode MOSFET that can operate at high power with high efficiency. It is used as a switch and amplifier for electronic components and its low on-resistance and fast switching speeds make it suitable for a range of applications. It also has a RoHS Compliant lead-frame, making it very environmentally-friendly.
The specific data is subject to PDF, and the above content is for reference
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