Allicdata Part #: | HUF76419D3-ND |
Manufacturer Part#: |
HUF76419D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A IPAK |
More Detail: | N-Channel 60V 20A (Tc) 75W (Tc) Through Hole TO-25... |
DataSheet: | HUF76419D3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 27.5nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF76419D3 is an N-Channel FET (Field Effect Transistor) designed for voltage and current applications in power management systems. It offers many advantages for use in high-power systems, including a low operating voltage and a low on-state power consumption. As with all FETs, the HUF76419D3 operates by allowing a controlled amount of current to flow between its gate and its source when a voltage is applied to the gate. This allows the user to control the amount of current that passes through the FET and to regulate the amount of power that is delivered to a component.
The HUF76419D3 is a unique FET in that it is an "enhancement mode" device. This means that its source and drain terminals are conducting when a voltage is applied to the gate. This allows the FET to act as both a switch and a current amplifier, depending on the voltage applied to the gate. Additionally, the HUF76419D3 can operate at high temperatures, which makes it suitable for use in high-power applications. It also has high stability, so its performance will remain consistent even when the temperature changes.
The HUF76419D3 has a range of uses in power management systems, such as in solar power systems, car batteries, and high-power LED systems. In solar power systems, the FET can be used in the control of the photovoltaic panel’s output voltage and current. In car batteries, the FET can be used to regulate the voltage of the power source and protect sensitive electronic components in the car from an overload of current. In high-power LED systems, the FET can be used to control the brightness and color of the LEDs and to protect sensitive components from an overload of current.
In addition to its applications in power management systems, the HUF76419D3 can also be used in applications that require the precise control of a voltage or current. This can include applications such as power supply design, power conditioning, and power conversion. As the FET is designed to switch and control the flow of current, it can be used to control the output of a power supply and to protect components from overcurrent.
The HUF76419D3 can be used as a switching device in many applications as it operates using a low voltage and is able to handle large amounts of current. It is an important component of any power management system and is an ideal choice for controlling the current and voltage of a power source. It can be used in a range of applications and is suitable for high-power, high-temperature operation.
The specific data is subject to PDF, and the above content is for reference
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