Allicdata Part #: | HUF76445S3S-ND |
Manufacturer Part#: |
HUF76445S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A D2PAK |
More Detail: | N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²P... |
DataSheet: | HUF76445S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUF76445S3S is a well-known type of Field Effect Transistor, or FET. It is a three-terminal component with a channel region between its drain and source, and a gate electrode on the surface. A voltage applied to the gate can change its conductivity, allowing for current to be controlled within a circuit. As such, it can be used for a variety of tasks, such as amplification, switching, and switching noise reduction.
The HUF76445S3S is a single-gate MOSFET (metal-oxide-semiconductor field-effect transistor). As a single-gate device, it has one main gate electrode to control the voltage applied across the drain and source. This makes it simpler to use than multi-gate FETs, which require multiple gates to be adjusted to control the current. The HUF76445S3S also has a low on-state resistance, so it can handle higher current loads than some other FETs.
The working principle of the HUF76445S3S is similar to that of other FETs. Applying a voltage across the gate electrode creates an electric field in the channel region between the drain and source. This electric field then alters the conductivity of the channel, allowing for current flow to be regulated. The amount of current that the FET can handle depends on the body voltage and gate voltage applied to the device.
The HUF76445S3S can be used in a variety of applications, including power management, signal conditioning, telecommunication, and audio equipment. When used in power management applications, it can be used to switch between different voltages and currents. For signal conditioning, it can be used to amplify signals and reduce switching noise. In telecommunication, it can be used for frequency conversion. In audio equipment, it can be used to control volume and tone levels.
The HUF76445S3S is an ideal choice for a range of applications due to its low on-resistance, excellent current handling capability, and single-gate design. Its simple and effective working principle allows users to easily adjust the current flow in a circuit, making it a great choice for power management, signal conditioning, telecommunication, and audio equipment.
The specific data is subject to PDF, and the above content is for reference
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