Allicdata Part #: | HUF75343P3-ND |
Manufacturer Part#: |
HUF75343P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-220AB |
More Detail: | N-Channel 55V 75A (Tc) 270W (Tc) Through Hole TO-2... |
DataSheet: | HUF75343P3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 205nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Description
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HUF75343P3 is a type of Single field-effect transistor (FET) that is widely used both in digital and analog circuit systems. This semiconductor device is commonly available in both N and P-channel type configurations with high power ratings and high performance levels. It is also available in a variety of packages, such as TO-252, SOT-223, and SOT-32P. The device is a power MOSFET (metal-oxide-semiconductor FET) that is suitable for long term operations at temperatures as high as 150°C.The working principle of a HUF75343P3 can be explained in two stages. The first stage is the input stage, where the gate voltage is applied to the device. This voltage is used to control the output current. The second stage is the source voltage, which is applied to the source terminal of the device. This voltage is used to determine the size of the drain current.The key feature of a HUF75343P3 is its low on-resistance. This allows the device to have low power losses when operating in high-current applications. This makes it highly efficient and allows it to be used in wide range of applications. It is commonly used as a switch to control the flow of power in systems like power supplies and amplifiers. It is also used in switching and electronic control applications in automotive, aerospace, industrial and consumer-electronic devices.HUF75343P3 devices are known for their excellent thermal stability. This allows them to operate in a wide range of temperatures while maintaining high performance levels. The device also has high reliability and low gate charging current, making it suitable for applications where power and control signals need to be switched reliably. It also has minimal input capacitance and high maximum drain current, making it suitable for high-speed switching applications.In addition to its wide range of applications, HUF75493P3 also has some other additional features that make it an attractive choice for designers. It has a low leakage current, which makes it suitable for environments where very low amounts of power are needed. It also has a low gate threshold voltage, allowing it to be used in applications that require low-voltage power supplies. Moreover, its high input impedance makes it suitable for use with high-impedance signals, such as reactive and capacitive loads. Finally, its external Gate-Source capacitance makes it suitable for using in applications that require greater noise suppression and better response times.In summary, HUF75343P3 is a high-performance and reliable power MOSFET (metal-oxide-semiconductor FET) that is suitable for a wide range of applications. Its low on-resistance enables it to have low power losses and high efficiency. Additionally, its excellent thermal stability, low leakage current, and low gate threshold voltage make it an attractive choice for a variety of applications. Its high input impedance, minimal gate capacitance, and low maximum drain current make it suitable for high-speed switching applications. Finally, its external Gate-Source capacitance makes it suitable for applications that require greater noise suppression and better response times.
The specific data is subject to PDF, and the above content is for reference
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