HUF75332P3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HUF75332P3 is a part of the Ultra-Fast Recovery Rectifier family. It is a Single P-Channel MOSFET that is designed for high-performance sensitive applications. It is a versatile device that is suitable for many MOSFET-based circuit designs. The device has an integrated Heatsink and Thermal Pad which aids in keeping the IC cool during operation and contributes to the overall operation of the IC.

The HUF75332P3 has a maximum drain current rating of 3.5A, with a maximum source-drain voltage of 40V. The maximum switching speed is 40ns with a maximum power dissipation of 18W. It also has an integrated ESD protection circuit with a maximum voltage rating of 6V. The device’s maximum margin on gate-source leakage current is 2nA.

The HUF75332P3’s applications include switching, magnification, and voltage control. Its wide range of operating temperatures make it a reliable choice for many industrial and consumer applications. Its integrated ESD protection provides an extra layer of protection to further extend its application regime.

The working principle of the device rests on its internal transistors. Specifically, it consists of two MOSFETs – one P-Channel and one N-Channel. The operating voltage range are from 1.2V to 40V, and the gate-source reverse gate-source leakage current is extremely low. The P-Channel and N-Channel MOSFETs work together to switch the internal circuit between high and low states. The more applied voltage, the faster the switching speed.

The device has some of the lowest power dissipation characteristics of all MOSFETs. It also has a fast switching speed and low softening time, which makes it ideal for high-performance applications. The MOSFETs also have a low threshold voltage, allowing them to be used in low-voltage applications. The device’s temperature range and operating voltage range also make it suitable for a wide variety of industrial, consumer, and military applications.

In summary, the HUF75332P3 is a single P-Channel MOSFET designed for high-performance application. It has an integrated ESD protection circuit and a temperature range of -55°C to 150°C. Its internal transistors have a fast switching speed, low power dissipation, and low threshold voltage. Due to its versatility, the HUF75332P3 is suitable for a wide range of applications, making it an ideal choice for many circuit designs.

The specific data is subject to PDF, and the above content is for reference